MT48LC4M16A2P-6:G Micron Technology Inc, MT48LC4M16A2P-6:G Datasheet - Page 48

• Manufacturer Part Number: MT48LC4M16A2P-6:G
• Description: DRAM Chip SDRAM 64M-Bit 4Mx16 3.3V 54-Pin TSOP-II Tray
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC4M16A2P-6:G

• Density: 64 Mb
• Maximum Clock Rate: 166 MHz
• Package: 54TSOP-II
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 3.3 V
• Maximum Random Access Time: 5.5 ns
• Operating Temperature: 0 to 70 °C
• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Package / Case: 54-TSOP II
• Organization: 4Mx16
• Address Bus: 14b
• Access Time (max): 5.5ns
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 180mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 18:
PDF: 09005aef80725c0b/Source: 09005aef806fc13c
64MSDRAM_2.fm - Rev. N 12/08 EN
AC Characteristics
Parameter
Access time from CLK
(positive edge)
Address hold time
Address setup time
CLK high-level width
CLK low-level width
Clock cycle time
CKE hold time
CKE setup time
CS#, RAS#, CAS#, WE#, DQM hold
time
CS#, RAS#, CAS#, WE#, DQM setup
time
Data-in hold time
Data-in setup time
Data-out High-Z time
Data-out Low-Z time
Data-out hold time (load)
Data-out hold time (no load)
ACTIVE-to-PRECHARGE command
ACTIVE-to-ACTIVE command period
ACTIVE-to-READ or WRITE delay
Refresh period (4,096 rows)
Refresh period–Automotive
(4,096 rows)
AUTO REFRESH period
PRECHARGE command period
ACTIVE bank a to ACTIVE bank b
command
Transition time
WRITE recovery time
Exit SELF REFRESH-to-ACTIVE
command
Electrical Characteristics and Recommended AC Operating Conditions
Notes 5, 6, 8, 9, 11, 34 apply to entire table; notes appear on pages 50 and 51; V
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
Symbol
t
t
t
t
t
t
t
t
t
t
t
REF
AC(3)
AC(2)
CK(3)
CK(2)
HZ(3)
HZ(2)
t
t
t
t
t
t
CMH
OHN
t
t
t
t
t
t
CKH
CMS
RCD
RRD
t
t
RAS
t
t
CKS
RFC
t
XSR
t
REF
WR
AH
DH
OH
CH
AS
DS
RC
RP
t
CL
LZ
T
AT
1 CLK
+ 6ns
Min
1.5
2.5
2.5
1.5
1.5
1.5
1.8
0.3
42
60
18
60
18
12
12
70
1
6
1
1
1
1
2
–
–
–
–
–
–
–
-6
120,000
Max
48
5.5
5.5
1.2
64
16
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1 CLK
+ 7ns
Min
0.8
1.5
2.5
2.5
7.5
0.8
1.5
0.8
1.5
0.8
1.5
1.8
0.3
37
60
15
66
15
14
14
67
Micron Technology, Inc., reserves the right to change products or specifications without notice.
7
1
3
–
–
–
–
–
–
-7E
120,000
Max
5.4
5.4
5.4
5.4
1.2
64
16
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
+ 7.5ns
1 CLK
64Mb: x4, x8, x16 SDRAM
Min
0.8
1.5
2.5
2.5
7.5
0.8
1.5
0.8
1.5
0.8
1.5
1.8
0.3
10
66
20
15
44
20
66
15
75
–
–
–
1
3
–
–
Electrical Specifications
-75
DD
120,000
©2000 Micron Technology, Inc. All rights reserved.
Max
, V
5.4
5.4
1.2
64
16
6
6
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
DD
Q = +3.3V ±0.3V
Units
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
–
Notes
27
23
23
10
10
28
24
25
20
7