M25P40-VMP6GB NUMONYX, M25P40-VMP6GB Datasheet - Page 37

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M25P40-VMP6GB

Manufacturer Part Number
M25P40-VMP6GB
Description
Flash Mem Serial-SPI 2.5V/3.3V 4M-Bit 512K x 8 8ns 8-Pin VFQFPN EP Tray
Manufacturer
NUMONYX
Datasheet

Specifications of M25P40-VMP6GB

Package
8VFQFPN EP
Cell Type
NOR
Density
4 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
2.5|3.3 V
Sector Size
64KByte x 8
Timing Type
Synchronous
Operating Temperature
-40 to 85 °C
Interface Type
Serial-SPI

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8
9
Initial delivery state
The device is delivered with the memory array erased: all bits are set to 1 (each byte
contains FFh). The Status Register contains 00h (all Status Register bits are 0).
Maximum rating
Stressing the device above the rating listed in the Absolute maximum ratings table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the Numonyx SURE Program
and other relevant quality documents.
Table 9.
1. Compliant with JEDEC Std J-STD-020C (for small body, Sn-Pb or Pb assembly) and the European
2. The minimum voltage may reach the value of -2 V for no more than 20 ns during transitions; The maximum
3. JEDEC Std JESD22-A114A (C1 = 100 pF, R1 = 1500 Ω, R2 = 500 Ω).
Symbol
directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.
voltage may reach the value of V
T
T
V
V
LEAD
V
STG
ESD
CC
IO
Absolute maximum ratings
Storage temperature
Lead temperature during soldering
Input and output voltage (with respect to Ground)
Supply voltage
Electrostatic Discharge voltage (Human Body model)
CC
+2 V for no more than 20 ns during transitions.
Parameter
(2)
(3)
–2000
Min.
–0.6
–0.6
–65
see
V
Max.
2000
150
CC
0.6
4.0
(1)
+
Unit
°C
°C
V
V
V
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