PUMD16,115 NXP Semiconductors, PUMD16,115 Datasheet - Page 4

• Manufacturer Part Number: PUMD16,115
• Description: TRANS NPN/PNP 50V 100MA SOT363
• Manufacturer: NXP Semiconductors

Specifications of PUMD16,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 22K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 22 KOhms
• Typical Resistor Ratio: 0.476
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Emitter- Base Voltage Vebo: 5 V
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4282-2; 934057892115; PUMD16 T/R

Philips Semiconductors
6. Thermal characteristics
7. Characteristics
Table 8:
T
9397 750 15178
Product data sheet
Symbol
Per transistor; for the PNP transistor with negative polarity
I
I
I
h
V
V
V
R1
R2/R1
C
CBO
CEO
EBO
amb
FE
CEsat
I(off)
I(on)
c
= 25 C unless otherwise specified.
Characteristics
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input voltage V
on-state input voltage V
bias resistor 1 (input)
bias resistor ratio
collector capacitance
TR1 (NPN)
TR2 (PNP)
Table 7:
[1]
[2]
Symbol
Per transistor
R
Per device
R
th(j-a)
th(j-a)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
Thermal characteristics
Conditions
V
V
V
T
V
V
I
V
f = 1 MHz
C
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to ambient
j
CB
CE
CE
EB
CE
CE
CE
CB
= 150 C
= 10 mA; I
SOT363
SOT666
SOT363
SOT666
= 5 V; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 0.3 V; I
= 10 V; I
NPN/PNP resistor-equipped transistors; R1 = 22 k , R2 = 47 k
C
C
C
E
B
B
B
= 0 A
Rev. 02 — 7 June 2005
= 5 mA
= 100 A
C
E
= 0.5 mA
= 0 A
= 0 A
= 0 A;
= 2 mA
= i
e
= 0 A;
Conditions
T
T
amb
amb
25 C
25 C
Min
-
-
-
-
80
-
-
2
15.4
1.7
-
-
PEMD16; PUMD16
[1] [2]
[1] [2]
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Typ
-
-
-
-
-
-
0.8
1.1
22
2.1
-
-
[1]
[1]
Min
-
-
-
-
Typ
-
-
-
-
Max
100
1
50
120
-
150
0.5
-
28.6
2.6
2.5
3
Max
625
625
416
416
Unit
nA
mV
V
V
k
pF
pF
Unit
K/W
K/W
K/W
K/W
A
A
A
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