PUMH14,115 NXP Semiconductors, PUMH14,115 Datasheet - Page 6

• Manufacturer Part Number: PUMH14,115
• Description: TRANS NPN 50V 100MA SOT363
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PUMH14,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: NPN
• Typical Input Resistor: 47 KOhm
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Resistor - Emitter Base (r2) (ohms): -
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Resistor - Emitter Base (r2) (ohms): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934057895115; PUMH14 T/R; PUMH14 T/R

NXP Semiconductors
10. Revision history
Table 10.
PEMH14_PUMH14_3
Product data sheet
Document ID
PEMH14_PUMH14_3
Modifications:
PEMH14_PUMH14_2
PUMH14_1
Revision history
Release date
20091115
20050429
20031016
•
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Figure 3 “Package outline SOT363
Rev. 03 — 15 November 2009
Data sheet status
Product data sheet
Product data sheet
Product specification
NPN/NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = open
(SC-88)”: updated
Change notice
-
-
-
PEMH14; PUMH14
Supersedes
PEMH14_PUMH14_2
PUMH14_1
-
© NXP B.V. 2009. All rights reserved.
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