PUMD30,115 NXP Semiconductors, PUMD30,115 Datasheet - Page 3

• Manufacturer Part Number: PUMD30,115
• Description: TRANS NPN/NPN W/RES 50V SOT-363
• Manufacturer: NXP Semiconductors

Specifications of PUMD30,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 20mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 2.2 KOhms
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Resistor - Emitter Base (r2) (ohms): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934059934115; PUMD30 T/R; PUMD30 T/R

Philips Semiconductors
5. Limiting values
6. Thermal characteristics
PEMD30_PUMD30_1
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Table 7.
[1]
[2]
Symbol
Per transistor; for the PNP transistor with negative polarity
V
V
V
I
I
P
Per device
P
T
T
T
Symbol
Per transistor
R
Per device
R
O
CM
stg
j
amb
CBO
CEO
EBO
tot
tot
th(j-a)
th(j-a)
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to ambient
Limiting values
Thermal characteristics
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
output current
peak collector current
total power dissipation
total power dissipation
storage temperature
junction temperature
ambient temperature
SOT363
SOT666
SOT363
SOT666
NPN/PNP double resistor-equipped transistors; R1 = 2.2 k , R2 = open
SOT363
SOT666
SOT363
SOT666
Rev. 01 — 31 March 2006
Conditions
open emitter
open base
open collector
single pulse;
t
T
T
p
Conditions
in free air
in free air
amb
amb
1 ms
25 C
25 C
PEMD30; PUMD30
[1][2]
[1][2]
[1]
[1]
[1][2]
[1][2]
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
-
65
65
Min
-
-
-
-
Typ
-
-
-
-
Max
50
50
5
100
100
200
200
300
300
+150
150
+150
Max
625
625
416
416
Unit
V
V
V
mA
mA
mW
mW
mW
mW
C
C
C
Unit
K/W
K/W
K/W
K/W
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