PUMD10,125 NXP Semiconductors, PUMD10,125 Datasheet - Page 2

• Manufacturer Part Number: PUMD10,125
• Description: TRANS ARRAY NPN/PNP SOT-363
• Manufacturer: NXP Semiconductors

Specifications of PUMD10,125

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 5V
• Vce Saturation (max) @ Ib, Ic: 100mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055239125

NXP Semiconductors
FEATURES
• Built-in bias resistors
• Simplifies circuit design
• Reduces component count
• Reduces pick and place costs.
APPLICATIONS
• Low current peripheral driver
• Replacement of general purpose transistors in digital
• Control of IC inputs.
DESCRIPTION
NPN/PNP resistor-equipped transistors (see “Simplified
outline, symbol and pinning” for package details).
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
2004 Apr 15
PEMD10
PUMD10
PEMD10; PUMD10
TYPE NUMBER
applications
TYPE NUMBER
NPN/PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩ
* = t: Made in Malaysia.
* = W: Made in China.
SOT666
SOT363
PHILIPS
handbook, halfpage
Top view
PACKAGE
6
1
SIMPLIFIED OUTLINE AND SYMBOL
−
SC-88
5
2
EIAJ
3
4
MAM448
2
TR1
MARKING CODE
QUICK REFERENCE DATA
6
1
V
I
TR1
TR2
R1
R2
SYMBOL
O
CEO
D*0
R1
R2
D1
(1)
5
2
R2
R1
collector-emitter
voltage
output current (DC)
NPN
PNP
bias resistor
bias resistor
PARAMETER
4
3
TR2
PEMB10
PUMB10
COMPLEMENT
PNP/PNP
PEMD10; PUMD10
PIN
1
2
3
4
5
6
−
−
−
−
2.2
47
TYP.
Product data sheet
PEMH10
PUMH10
PINNING
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
COMPLEMENT
DESCRIPTION
50
100
−
−
−
−
NPN/NPN
MAX.
V
mA
−
−
kΩ
kΩ
UNIT