PUMD48,125 NXP Semiconductors, PUMD48,125 Datasheet - Page 3

• Manufacturer Part Number: PUMD48,125
• Description: TRANS ARRAY NPN/PNP SOT-363
• Manufacturer: NXP Semiconductors

Specifications of PUMD48,125

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 47K, 2.2K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 5V / 100 @ 10mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA / 100mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 2.2 KOhms
• Typical Resistor Ratio: 21
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Power Dissipation: 200 mw
• Maximum Operating Temperature: + 150 C
• Emitter- Base Voltage Vebo: 10 V
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055444125

NXP Semiconductors
5. Limiting values
PEMD48_PUMD48_5
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Symbol
Per transistor; for the PNP transistor with negative polarity
V
V
V
V
I
P
Per device
P
T
T
T
I
O
CM
j
amb
stg
CBO
CEO
EBO
I
tot
tot
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage TR1
input voltage TR2
output current
peak collector current
total power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
positive
negative
positive
negative
PEMD48 (SOT666)
PUMD48 (SOT363)
PEMD48 (SOT666)
PUMD48 (SOT363)
All information provided in this document is subject to legal disclaimers.
Rev. 05 — 13 April 2010
Conditions
open emitter
open base
open collector
T
T
amb
amb
≤ 25 °C
≤ 25 °C
NPN/PNP resistor-equipped transistors
PEMD48; PUMD48
[1][2]
[1][2]
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
−65
−65
© NXP B.V. 2010. All rights reserved.
Max
50
50
10
+40
−10
+5
−12
100
100
200
200
300
300
150
+150
+150
Unit
V
V
V
V
V
V
V
mA
mA
mW
mW
mW
mW
°C
°C
°C
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