PEMB1,115 NXP Semiconductors, PEMB1,115 Datasheet - Page 5

• Manufacturer Part Number: PEMB1,115
• Description: TRANS PNP/PNP 50V 100MA SOT666
• Manufacturer: NXP Semiconductors

Specifications of PEMB1,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 22K
• Resistor - Emitter Base (r2) (ohms): 22K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: PNP
• Typical Input Resistor: 22 KOhm
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056869115; PEMB1 T/R; PEMB1 T/R

NXP Semiconductors
PACKAGE OUTLINES
2003 Oct 15
Plastic surface mounted package; 6 leads
PNP/PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = 22 kΩ
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT666
0.6
0.5
A
S
0.27
0.17
b
p
pin 1 index
0.18
0.08
c
IEC
Y S
6
1
e 1
1.7
1.5
D
D
e
1.3
1.1
b p
E
5
2
JEDEC
0
1.0
e
REFERENCES
3
4
0.5
e
1
w
A
M
A
1.7
1.5
H
E
scale
EIAJ
1
5
0.3
0.1
L
p
0.1
w
A
0.1
y
2 mm
H E
E
detail X
PROJECTION
EUROPEAN
PEMB1; PUMB1
L p
Product data sheet
c
X
ISSUE DATE
01-01-04
01-08-27
SOT666