PEMB24,115 NXP Semiconductors, PEMB24,115 Datasheet - Page 7

TRANS PNP W/RES 50V SOT-666

PEMB24,115

Manufacturer Part Number
PEMB24,115
Description
TRANS PNP W/RES 50V SOT-666
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PEMB24,115

Package / Case
SS Mini-6 (SOT-666)
Transistor Type
2 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
20mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
100K
Resistor - Emitter Base (r2) (ohms)
100K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
150mV @ 250µA, 5mA
Current - Collector Cutoff (max)
1µA
Power - Max
300mW
Mounting Type
Surface Mount
Configuration
Dual
Transistor Polarity
PNP
Typical Input Resistor
100 KOhm
Typical Resistor Ratio
1
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
20 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934058917115
PEMB24 T/R
PEMB24 T/R
NXP Semiconductors
Fig 6.
PEMB24_PUMB24_2
Product data sheet
Plastic surface-mounted package; 6 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
Package outline SOT666
OUTLINE
VERSION
SOT666
0.6
0.5
A
S
0.27
0.17
b
p
pin 1 index
0.18
0.08
c
IEC
Y S
6
1
e 1
1.7
1.5
D
D
e
1.3
1.1
b p
E
5
2
JEDEC
0
1.0
e
PNP/PNP resistor-equipped transistors; R1 = 100 k , R2 = 100 k
3
REFERENCES
4
Rev. 02 — 2 September 2009
0.5
e
1
w
A
M
1.7
1.5
A
H
E
JEITA
scale
1
0.3
0.1
L
p
0.1
w
A
0.1
y
2 mm
PEMB24; PUMB24
H E
E
detail X
PROJECTION
EUROPEAN
L p
c
© NXP B.V. 2009. All rights reserved.
X
ISSUE DATE
04-11-08
06-03-16
SOT666
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