PUMH11,115 NXP Semiconductors, PUMH11,115 Datasheet - Page 3

TRANS PREBIASED DUAL NPN SOT666

PUMH11,115

Manufacturer Part Number
PUMH11,115
Description
TRANS PREBIASED DUAL NPN SOT666
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PUMH11,115

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (max)
1µA
Power - Max
300mW
Mounting Type
Surface Mount
Configuration
Dual
Transistor Polarity
NPN
Typical Input Resistor
10 KOhm
Typical Resistor Ratio
1
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Collector-emitter Voltage
50V
Dc Current Gain (min)
30
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
SC-88
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Compliant
Other names
568-5041-2
934049930115
PUMH11 T/R
PUMH11 T/R
PUMH11,115

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PUMH11,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
2003 Oct 20
PEMH11
PUMH11
Per transistor
V
V
V
V
I
I
P
T
T
T
Per device
P
O
CM
SYMBOL
stg
j
amb
CBO
CEO
EBO
I
tot
tot
NPN/NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩ
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
total power dissipation
positive
negative
SOT363
SOT666
SOT363
SOT666
PARAMETER
NAME
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
open emitter
open base
open collector
T
note 1
notes 1 and 2
T
note 1
notes 1 and 2
amb
amb
≤ 25 °C
≤ 25 °C
3
CONDITIONS
PACKAGE
DESCRIPTION
−65
−65
PEMH11; PUMH11
MIN.
50
50
10
+40
−10
100
100
200
200
+150
150
+150
300
300
MAX.
Product data sheet
VERSION
SOT666
SOT363
V
V
V
V
V
mA
mA
mW
mW
°C
°C
°C
mW
mW
UNIT

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