MUN5314DW1T1G ON Semiconductor, MUN5314DW1T1G Datasheet - Page 13
![TRANS BRT DUAL 100MA 50V SOT-363](/photos/1/38/13878/sc-70-6_sc-88_sot-363_419b___02_sml.jpg)
MUN5314DW1T1G
Manufacturer Part Number
MUN5314DW1T1G
Description
TRANS BRT DUAL 100MA 50V SOT-363
Manufacturer
ON Semiconductor
Datasheet
1.MUN5312DW1T1G.pdf
(34 pages)
Specifications of MUN5314DW1T1G
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Other names
MUN5314DW1T1G
MUN5314DW1T1GOSTR
MUN5314DW1T1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MUN5314DW1T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MUN5314DW1T1G
Manufacturer:
ON/安森美
Quantity:
20 000
Final Product/Process Change Notification #16266
MM3Z10VT1
MM3Z10VT1G
MM3Z10VT1H
MM3Z11VT1G
MM3Z12VST1G
MM3Z12VT1
MM3Z12VT1G
MM3Z13VT1G
MM3Z15VST1G
MM3Z15VT1
MM3Z15VT1G
MM3Z16VST1G
MM3Z16VT1G
MM3Z18VST1G
MM3Z18VT1
MM3Z18VT1G
MM3Z20VT1G
MM3Z22VST1G
MM3Z22VT1G
MM3Z24VT1G
MM3Z27VST1G
MM3Z27VT1G
MM3Z2V4T1G
MM3Z2V7T1G
MM3Z2V7T1H
MM3Z33VST1G
MM3Z33VT1G
MM3Z33VT3G
MM3Z36VT1G
MM3Z39VT1G
MM3Z3V0T1G
MM3Z3V3ST1G
MM3Z3V3T1G
MM3Z3V6T1G
MM3Z3V9ST1
MM3Z3V9ST1G
MM3Z3V9T1G
MM3Z43VT1
MM3Z43VT1G
MM3Z4V3ST1G
MM3Z4V3T1G
MM3Z4V7ST1G
MM3Z4V7ST3G
MM3Z4V7T1G
MM3Z5V1ST1G
MM3Z5V1T1G
MM3Z5V6ST1G
MM3Z5V6T1G
MM3Z6V2ST1G
MM3Z6V2T1G
MM3Z6V2T1H
MM3Z6V8ST1G
MM3Z6V8ST1H
MM3Z6V8T1
MM3Z6V8T1G
Issue Date: 08 Jun 2009
Rev.14 Jun 2007
Page 13 of 36