MUN5314DW1T1G ON Semiconductor, MUN5314DW1T1G Datasheet - Page 22
![TRANS BRT DUAL 100MA 50V SOT-363](/photos/1/38/13878/sc-70-6_sc-88_sot-363_419b___02_sml.jpg)
MUN5314DW1T1G
Manufacturer Part Number
MUN5314DW1T1G
Description
TRANS BRT DUAL 100MA 50V SOT-363
Manufacturer
ON Semiconductor
Datasheet
1.MUN5312DW1T1G.pdf
(34 pages)
Specifications of MUN5314DW1T1G
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Other names
MUN5314DW1T1G
MUN5314DW1T1GOSTR
MUN5314DW1T1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MUN5314DW1T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MUN5314DW1T1G
Manufacturer:
ON/安森美
Quantity:
20 000
Final Product/Process Change Notification #16266
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MUN5230DW1T1G
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MUN5233DW1T1G
MUN5235DW1T1G
MUN5237DW1T1G
MUN5311DW1T1
MUN5311DW1T1G
MUN5311DW1T2G
MUN5312DW1T1G
MUN5313DW1T1G
MUN5314DW1T1
MUN5314DW1T1G
MUN5315DW1T1G
MUN5316DW1T1G
MUN5330DW1T1
MUN5330DW1T1G
MUN5333DW1T1G
MUN5334DW1T1G
MUN5335DW1T1
MUN5335DW1T1G
MUN5335DW1T2
Issue Date: 08 Jun 2009
Rev.14 Jun 2007
Page 22 of 36