MUN5314DW1T1G ON Semiconductor, MUN5314DW1T1G Datasheet - Page 5
![TRANS BRT DUAL 100MA 50V SOT-363](/photos/1/38/13878/sc-70-6_sc-88_sot-363_419b___02_sml.jpg)
MUN5314DW1T1G
Manufacturer Part Number
MUN5314DW1T1G
Description
TRANS BRT DUAL 100MA 50V SOT-363
Manufacturer
ON Semiconductor
Datasheet
1.MUN5312DW1T1G.pdf
(34 pages)
Specifications of MUN5314DW1T1G
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Other names
MUN5314DW1T1G
MUN5314DW1T1GOSTR
MUN5314DW1T1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MUN5314DW1T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MUN5314DW1T1G
Manufacturer:
ON/安森美
Quantity:
20 000
Final Product/Process Change Notification #16266
MMSZ5270BT1G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
HAST+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs HAST
RSH
MMSZ9V1ET1G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
HAST+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs HAST
RSH
MBR0520LT3G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
H3TRB+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
RSH
Issue Date: 08 Jun 2009
Ta=130C RH=85% p=~18.8psig
Ta=130C RH=85% p=~18.8psig
bias=80% rated V or100V Max
bias=80% rated V or100V Max
Ta=85C RH=85%
bias=80% rated V or100V Max
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
Conditions:
Conditions:
Conditions:
Rev.14 Jun 2007
1008 hrs
15000 cyc
1008 hrs
15000 cyc
Interval:
Interval:
Interval:
1000 cyc
1008 hrs
1000 cyc
1008 hrs
15000 cyc
96 hrs
1008 hrs
1008 hrs
96 hrs
96 hrs
1000 cyc
96 hrs
1008 hrs
96 hrs
Results
0/160
0/640
0/160
0/160
0/160
0/160
0/160
0/4
Results
0/80
0/320
0/80
0/80
0/80
0/80
0/80
0/2
Results
0/80
0/320
0/80
0/80
0/80
0/80
0/80
0/4
0/60
0/2
0/30
0/30
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