MUN5314DW1T1G ON Semiconductor, MUN5314DW1T1G Datasheet - Page 3
![TRANS BRT DUAL 100MA 50V SOT-363](/photos/1/38/13878/sc-70-6_sc-88_sot-363_419b___02_sml.jpg)
MUN5314DW1T1G
Manufacturer Part Number
MUN5314DW1T1G
Description
TRANS BRT DUAL 100MA 50V SOT-363
Manufacturer
ON Semiconductor
Datasheet
1.MUN5312DW1T1G.pdf
(34 pages)
Specifications of MUN5314DW1T1G
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Other names
MUN5314DW1T1G
MUN5314DW1T1GOSTR
MUN5314DW1T1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MUN5314DW1T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MUN5314DW1T1G
Manufacturer:
ON/安森美
Quantity:
20 000
Final Product/Process Change Notification #16266
MMBZ5263BLT1G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
H3TRB+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs H3TRB
RSH
MMBZ33VALT1G
Test:
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
H3TRB+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs H3TRB
RSH
SOD-123
MMSD103T1G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
HAST+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs HAST
RSH
Issue Date: 08 Jun 2009
Ta=130C RH=85% p=~18.8psig
Ta=85C RH=85%
bias=80% rated V or100V Max
Ta=85C RH=85%
bias=80% rated V or100V Max
bias=80% rated V or100V Max
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
Conditions:
Conditions:
Conditions:
Rev.14 Jun 2007
Interval:
Interval:
Interval:
15000 cyc
1000 cyc
1008 hrs
15000 cyc
1000 cyc
1008 hrs
1008 hrs
15000 cyc
1000 cyc
1008 hrs
1008 hrs
1008 hrs
1008 hrs
96 hrs
96 hrs
96 hrs
96 hrs
Results
0/80
0/320
0/80
0/80
0/80
0/80
0/2
Results
0/960
0/240
0/240
0/240
0/240
0/6
Results
0/240
0/960
0/240
0/240
0/240
0/240
0/6
0/80
0/2
0/30
0/240
0/6
0/90
0/240
0/6
0/89
Page 3 of 36