BC847BPNT/R NXP Semiconductors, BC847BPNT/R Datasheet - Page 4

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BC847BPNT/R

Manufacturer Part Number
BC847BPNT/R
Description
Trans GP BJT NPN/PNP 45V 0.1A 6-Pin SOT-363 T/R
Manufacturer
NXP Semiconductors
Type
NPN|PNPr
Datasheet

Specifications of BC847BPNT/R

Package
6SOT-363
Supplier Package
SOT-363
Pin Count
6
Minimum Dc Current Gain
200@2mA@5V
Maximum Operating Frequency
100(Min) MHz
Maximum Dc Collector Current
0.1 A
Maximum Base Emitter Saturation Voltage
0.755(Typ)@0.5mA@10mA V
Maximum Collector Emitter Saturation Voltage
0.1@0.5mA@10mA|0.3@5mA@100mA V
Maximum Collector Base Voltage
50 V
Maximum Collector Emitter Voltage
45 V
Maximum Emitter Base Voltage
5 V
NXP Semiconductors
BC847BPN_4
Product data sheet
Fig 2.
Fig 3.
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
1
1
3
2
10
3
2
10
FR4 PCB, standard footprint
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
FR4 PCB, mounting pad for collector 1 cm
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
5
5
0.50
0.20
0.05
0.01
0.50
0.20
0.05
0.01
= 1
0
= 1
0
0.75
0.33
0.10
0.02
0.75
0.33
0.10
0.02
10
10
4
4
10
10
3
3
10
10
2
Rev. 04 — 18 February 2009
2
2
10
10
1
1
45 V, 100 mA NPN/PNP general-purpose transistor
1
1
10
10
BC847BPN
10
10
2
2
© NXP B.V. 2009. All rights reserved.
t
t
p
p
006aab420
006aab421
(s)
(s)
10
10
3
3
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