BFM520T/R NXP Semiconductors, BFM520T/R Datasheet - Page 5

• Manufacturer Part Number: BFM520T/R
• Description: Trans GP BJT NPN 8V 0.07A 6-Pin SOT-363 T/R
• Manufacturer: NXP Semiconductors
• Type: NPNr

Specifications of BFM520T/R

• Package: 6SOT-363
• Supplier Package: SOT-363
• Pin Count: 6
• Minimum Dc Current Gain: 60@20mA@6V
• Maximum Operating Frequency: 9000(Typ) MHz
• Maximum Dc Collector Current: 0.07 A
• Maximum Collector Base Voltage: 20 V
• Maximum Collector Emitter Voltage: 8 V
• Maximum Emitter Base Voltage: 2.5 V

NXP Semiconductors
1996 Oct 08
handbook, halfpage
handbook, halfpage
Dual NPN wideband transistor
V
Fig.4
CE
(mW)
P tot
Fig.2 Power derating as a function of soldering
h FE
= 6 V.
250
200
150
100
1.5
0.5
50
1
0
0
10
0
DC current gain as a function of collector
current; typical values.
−2
double loaded
single loaded
point temperature; typical values.
10
50
−1
100
1
150
10
I C (mA)
T s (
MBG228
MRA703
o
C)
200
10
2
5
handbook, halfpage
handbook, halfpage
f = 1 GHz; T
Fig.3
I
Fig.5
(GHz)
(pF)
C
C re
= 0; f = 1 MHz.
f T
0.6
0.4
0.2
12
0
8
4
0
10
0
−1
Transition frequency as a function of
collector current; typical values.
Feedback capacitance as a function of
collector-base voltage; typical values.
amb
= 25 C.
4
1
8
10
Product specification
V CB (V)
I C (mA)
V CE = 6V
V CE = 3V
BFM520
MRA704
MRA705
12
10
2