BA591 T/R NXP Semiconductors, BA591 T/R Datasheet

Diode PIN Switch 35V 2-Pin SOD-323 T/R

BA591 T/R

Manufacturer Part Number
BA591 T/R
Description
Diode PIN Switch 35V 2-Pin SOD-323 T/R
Manufacturer
NXP Semiconductors
Type
Switchr
Datasheet

Specifications of BA591 T/R

Maximum Power Dissipation
500 mW
Maximum Diode Capacitance
0.9@3V pF
Package
2SOD-323
Configuration
Single
Frequency Range
VHF
Maximum Forward Current
100 mA
Maximum Forward Voltage
1@10mA V
Maximum Reverse Voltage
35 V
Product
Switching Diodes
Forward Continuous Current
100 mA
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
20 nA
Mounting Style
SMD/SMT
Package / Case
SOD-323
Reverse Voltage
35 V
Maximum Operating Temperature
+ 150 C
Maximum Series Resistance @ Maximum If
0.5 Ohms
Maximum Series Resistance @ Minimum If
0.7 Ohms
Minimum Operating Temperature
- 65 C
Power Dissipation
500 mW
Lead Free Status / Rohs Status
 Details
Other names
BA591,115
Product specification
Supersedes data of 1998 Aug 31
DATA SHEET
BA591
Band-switching diode
DISCRETE SEMICONDUCTORS
2004 Feb 17

Related parts for BA591 T/R

BA591 T/R Summary of contents

Page 1

DATA SHEET BA591 Band-switching diode Product specification Supersedes data of 1998 Aug 31 DISCRETE SEMICONDUCTORS 2004 Feb 17 ...

Page 2

... NXP Semiconductors Band-switching diode FEATURES  Very small plastic SMD package  Low diode capacitance: max. 1.05 pF  Low diode forward resistance: max. 0.7   Small inductance. APPLICATIONS  Low loss band-switching in VHF television tuners  Surface mount band-switching circuits. ...

Page 3

... NXP Semiconductors Band-switching diode CHARACTERISTICS = 25 C unless otherwise specified SYMBOL PARAMETER V forward voltage F I reverse current R C diode capacitance d r diode forward resistance D 1/g reverse resistance p L series inductance S Note 1. Guaranteed on AQL basis; inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to soldering point ...

Page 4

... NXP Semiconductors Band-switching diode GRAPHICAL DATA 1.6 handbook, halfpage C d (pF) 1.2 0.8 0  MHz Fig.2 Diode capacitance as a function of reverse voltage; typical values. 2004 Feb 17 MGL477 handbook, halfpage ( Fig (Ω) 1 −1 10 −  100 MHz. Diode forward resistance as a function of forward current; typical values. ...

Page 5

... NXP Semiconductors Band-switching diode PACKAGE OUTLINE Plastic surface-mounted package; 2 leads 1 (1) DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.40 0.25 mm 0.05 0.8 0.25 0.10 Note 1. The marking bar indicates the cathode OUTLINE VERSION IEC SOD323 2004 Feb scale 1.8 1.35 2 ...

Page 6

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

Page 7

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 8

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

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