PMBT3906,215 NXP Semiconductors, PMBT3906,215 Datasheet

TRANS PNP SW 200MA 40V SOT23

PMBT3906,215

Manufacturer Part Number
PMBT3906,215
Description
TRANS PNP SW 200MA 40V SOT23
Manufacturer
NXP Semiconductors
Datasheets
1.PMBT3906215.pdf (9 pages)
2.PMBT3906215.pdf (11 pages)

Specifications of PMBT3906,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
PNP
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
250mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
30
Gain Bandwidth Product Ft
250 MHz
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 40 V
Emitter- Base Voltage Vebo
- 6 V
Continuous Collector Current
- 200 mA
Maximum Dc Collector Current
- 200 mA
Power Dissipation
250 mW
Maximum Operating Frequency
250 MHz
Maximum Operating Temperature
+ 150 C
Number Of Elements
1
Collector-emitter Voltage
40V
Collector-base Voltage(max)
40V
Emitter-base Voltage (max)
6V
Collector Current (dc) (max)
200mA
Frequency (max)
250MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
TO-236AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Compliant
Other names
568-1742-2
933776010215
PMBT3906 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
PMBT3906,215
Manufacturer:
NXP Semiconductors
Quantity:
20 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
PMBT3906,215
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
http://www.philips.semiconductors.com use http://www.nxp.com
http://www.semiconductors.philips.com use http://www.nxp.com (Internet)
sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com
(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
- © NXP B.V. (year). All rights reserved. -
If you have any questions related to the data sheet, please contact our nearest sales
office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your
cooperation and understanding,
NXP Semiconductors
PMBT3906
PNP switching transistor
Rev. 05 — 4 October 2007
IMPORTANT NOTICE
Product data sheet

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PMBT3906,215 Summary of contents

Page 1

... IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. ...

Page 2

... NXP Semiconductors PNP switching transistor FEATURES Collector current capability I = 200 mA C Collector-emitter voltage V CEO APPLICATIONS General amplification and switching. DESCRIPTION PNP switching transistor in a SOT23 plastic package. NPN complement: PMBT3904. MARKING TYPE NUMBER PMBT3906 Note Made in Hong Kong Made in Malaysia Made in China. ...

Page 3

... NXP Semiconductors PNP switching transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current BM P total power dissipation tot ...

Page 4

... NXP Semiconductors PNP switching transistor CHARACTERISTICS unless otherwise specified. amb SYMBOL PARAMETER I collector cut-off current CBO I emitter cut-off current EBO h DC current gain FE V collector-emitter saturation CEsat voltage V base-emitter saturation voltage BEsat C collector capacitance c C emitter capacitance e f transition frequency ...

Page 5

... NXP Semiconductors PNP switching transistor 600 handbook, halfpage h FE (1) 400 (2) 200 ( ( 150 C. amb ( amb ( amb Fig.2 DC current gain; typical values. 1200 handbook, halfpage V BE (mV) 1000 (1) 800 (2) 600 (3) 400 200 ( amb ( amb ( 150 C. amb Fig.4 Base-emitter voltage as a function of collector current. MHC459 ...

Page 6

... NXP Semiconductors PNP switching transistor 3 10 handbook, halfpage V CEsat (mV) ( amb ( 150 C. amb ( amb Fig.6 Collector-emitter saturation voltage as a function of collector current. handbook, full pagewidth 500 Oscilloscope: input impedance MHC463 (mA (probe) oscilloscope 450 ns. = 270 . C Fig.7 Test circuit for switching times. ...

Page 7

... NXP Semiconductors PNP switching transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES JEDEC ...

Page 8

... For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail ...

Page 9

... NXP Semiconductors Revision history Table 1. Revision history Document ID Release date PMBT3906_N_5 20071004 • Modifications: Marking code corrected (page 2) PMBT3906_4 20040121 (9397 750 12535) PMBT3906_3 19990427 (9397 750 05816) PMBT3906_CNV_2 19970505 (9397 750 02091) Data sheet status Change notice Product data sheet - Product specifi ...

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