2PB710ARL,215 NXP Semiconductors, 2PB710ARL,215 Datasheet - Page 3

• Manufacturer Part Number: 2PB710ARL,215
• Description: TRANSISTOR PNP 50V 500MA SOT-23
• Manufacturer: NXP Semiconductors

Specifications of 2PB710ARL,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 30mA, 300mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 150mA, 10V
• Power - Max: 250mW
• Frequency - Transition: 120MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 120 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2PB710ARL T/R; 568-4659-2; 934062302215

NXP Semiconductors
5. Limiting values
6. Thermal characteristics
7. Characteristics
2PB710AXL_1
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Table 7.
[1]
Table 8.
T
Symbol
V
V
V
I
I
I
P
T
T
T
Symbol
R
Symbol
I
I
h
V
C
CM
BM
CBO
EBO
amb
FE
j
amb
stg
CBO
CEO
EBO
tot
CEsat
th(j-a)
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
= 25 C unless otherwise specified.
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
Parameter
thermal resistance from junction
to ambient
Limiting values
Thermal characteristics
Characteristics
Parameter
collector-base cut-off
current
emitter-base cut-off current V
DC current gain
collector-emitter saturation
voltage
h
h
FE
FE
group R
group S
Rev. 01 — 29 October 2008
2PB710ARL; 2PB710ASL
Conditions
V
V
T
V
I
V
I
V
I
I
I
C
C
C
C
B
j
CB
CB
EB
CE
CE
CE
50 V, 500 mA PNP general-purpose transistors
= 150 C
= 30 mA
= 500 mA
= 150 mA
= 150 mA
= 300 mA;
Conditions
open emitter
open base
open collector
single pulse;
t
single pulse;
t
T
Conditions
in free air
p
p
= 60 V; I
= 60 V; I
= 5 V; I
= 10 V;
= 10 V;
= 10 V;
amb
1 ms
1 ms
25 C
C
E
E
= 0 A
= 0 A;
= 0 A
[1]
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
-
-
-
-
-
Min
-
Min
-
-
-
40
120
170
-
55
65
Typ
-
Typ
-
-
-
-
-
-
-
© NXP B.V. 2008. All rights reserved.
Max
250
150
+150
+150
60
50
5
500
1
200
Max
500
Max
-
240
340
10
5
10
600
Unit
V
V
V
mA
A
mA
mW
C
C
C
Unit
K/W
Unit
nA
nA
mV
A
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