2SD1781KT146Q Rohm Semiconductor, 2SD1781KT146Q Datasheet

2SD1781KT146Q

Manufacturer Part Number

2SD1781KT146Q

Description

TRANS NPN 32V 0.8A SOT-346

Manufacturer

Rohm Semiconductor

Datasheet

1.2SD1781KT146Q.pdf (4 pages)

Specifications of 2SD1781KT146Q

Transistor Type

NPN

Current - Collector (ic) (max)

800mA

Voltage - Collector Emitter Breakdown (max)

32V

Vce Saturation (max) @ Ib, Ic

400mV @ 50mA, 500mA

Dc Current Gain (hfe) (min) @ Ic, Vce

120 @ 100mA, 3V

Power - Max

200mW

Frequency - Transition

150MHz

Mounting Type

Surface Mount

Package / Case

SC-59-3, SMT3, SOT-346, TO-236

Transistor Polarity

NPN

Collector Emitter Voltage V(br)ceo

32V

Power Dissipation Pd

200mW

Dc Collector Current

800mA

Transistor Case Style

SC-59

No. Of Pins

Svhc

No SVHC (18-Jun-2010)

RoHS Compliant

Configuration

Single

Mounting Style

SMD/SMT

Collector- Emitter Voltage Vceo Max

32 V

Emitter- Base Voltage Vebo

5 V

Continuous Collector Current

0.8 A

Maximum Dc Collector Current

0.8 A

Power Dissipation

200 mW

Maximum Operating Frequency

150 MHz

Maximum Operating Temperature

+ 150 C

Dc Collector/base Gain Hfe Min

120

Gain Bandwidth Product Ft

150 MHz

Dc Current Gain Hfe

120

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

2SD1781KT146Q
2SD1781KT146QTR

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Transistors

Medium Power Transistor (32V, 0.8A)

2SD1781K

1) Very Low V

2) High current capacity in compact package.

3) Complements the 2SB1197K.

Epitaxial planar type

NPN silicon transistor

Features

Structure

Absolute maximum ratings (Ta=25 C)

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

∗

Single pulse Pw=100ms

CE(sat)

/ I

= 0.1V(Typ.)

= 500 A / 50mA

Parameter

CE(sat)

Symbol

Tstg

CBO

CEO

EBO

−55 to

Limits

200

150

0.8

1.5

∗

150

External dimensions (Unit : mm)

ROHM : SMT3

EIAJ : SC-59

Denotes h

A (Pulse)

A (DC)

Unit

°C

(1)

0.95 0.95

2.9±0.2

1.9±0.2

∗

All terminals have

same dimensions

(2)

(3)

0.4

+0.1

−0.05

Abbreviated symbol : AF

0.15

Rev.A

+0.1

−0.06

1.1

∗

0.8±0.1

2SD1781K

+0.2

−0.1

0~0.1

1/3

(1) Emitter

(2) Base

(3) Collector

Related parts for 2SD1781KT146Q

2SD1781KT146Q Summary of contents

Page 1

Transistors Medium Power Transistor (32V, 0.8A) 2SD1781K Features 1) Very Low V . CE(sat 0.1V(Typ.) CE(sat 500 A / 50mA High current capacity in compact package. 3) Complements the 2SB1197K. Structure ...

Page 2

Transistors Electrical characteristics (Ta=25 C) Parameter Symbol Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Packaging specifications and h FE Package Code ...

Page 3

Transistors 1000 Ta=25°C 500 200 100 = 100 200 500 1000 (mA) COLLECTOR CURRENT : I C Fig.4 Collector-emitter saturation voltage vs. collector current ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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