2SD1781KT146Q Rohm Semiconductor, 2SD1781KT146Q Datasheet - Page 2

• Manufacturer Part Number: 2SD1781KT146Q
• Description: TRANS NPN 32V 0.8A SOT-346
• Manufacturer: Rohm Semiconductor

Specifications of 2SD1781KT146Q

• Transistor Type: NPN
• Current - Collector (ic) (max): 800mA
• Voltage - Collector Emitter Breakdown (max): 32V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 100mA, 3V
• Power - Max: 200mW
• Frequency - Transition: 150MHz
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 32V
• Power Dissipation Pd: 200mW
• Dc Collector Current: 800mA
• Transistor Case Style: SC-59
• No. Of Pins: 3
• Svhc: No SVHC (18-Jun-2010)
• Dc: RoHS Compliant
• Configuration: Single
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 32 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 0.8 A
• Maximum Dc Collector Current: 0.8 A
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 150 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 120
• Gain Bandwidth Product Ft: 150 MHz
• Dc Current Gain Hfe: 120
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2SD1781KT146Q; 2SD1781KT146QTR

Transistors
Type
2SD1781K
Electrical characteristics (Ta=25 C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Packaging specifications and h
Electrical characteristic curves
Fig.1
1000
500
200
100
0.5
0.2
0.1
50
20
10
5
2
1
0
BASE TO EMITTER VOLTAGE : V
0.2
Grounded emitter propagation
characteristics
0.4 0.6 0.8 1.0 1.2 1.4 1.6
Parameter
h
QR
FE
Package
Code
Basic ordering
unit (pieces)
V
Ta = 25°C
CE
= 6V
BE
(V)
FE
Symbol
BV
BV
BV
V
Cob
I
I
h
CBO
EBO
CE(sat)
f
FE
CBO
CEO
EBO
T
Taping
T146
3000
400
300
200
100
COLLECTOR TO EMITTER VOLTAGE : V
0
Min.
120
0
40
32
Fig.2
5
−
−
−
−
−
2
Typ.
150
0.1
15
Grounded emitter output
characteristics
−
−
−
−
−
−
4
Max.
390
0.5
0.5
0.4
−
−
−
−
−
6
h
FE
MHz
Unit
μ A
μ A
pF
Item
V
V
V
V
−
h
values are classified as follows :
FE
Tc=25°C
8
I
B
900μA
800μA
800μA
700μA
600μA
500μA
400μA
300μA
200μA
100μA
=0μA
I
I
I
V
V
I
V
V
V
1mA
1mA
C
C
E
C
=50 μ A
CB
EB
CE
CE
CB
=50 μ A
=1mA
/I
CE
B
=4V
=20V
=3V, I
=5V, I
=10V, I
10
=500mA/50mA
120 to 270
(V)
Q
C
E
= −50mA, f=100MHz
=100mA
E
Conditions
=0A, f=1MHz
1000
Fig.3
500
200
100
50
20
10
1
180 to 390
2
COLLECTOR CURRENT : I
DC current gain vs. collector
current
R
5
10 20
Ta=100°C
Rev.A
−55°C
25°C
2SD1781K
50 100 200 500 1000
C
V
(mA)
CE
= 5V
2/3