PZT2222A,115 NXP Semiconductors, PZT2222A,115 Datasheet

TRANS NPN 60V 600MA SOT223

PZT2222A,115

Manufacturer Part Number
PZT2222A,115
Description
TRANS NPN 60V 600MA SOT223
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PZT2222A,115

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
NPN
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
1V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
1.15W
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
35
Minimum Operating Temperature
- 65 C
Configuration
Single Dual Collector
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
600 mA
Maximum Dc Collector Current
800 mA
Power Dissipation
1.15 W
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-4879-2
933975330115
PZT2222A T/R
PZT2222A T/R
PZT2222A,115
Product data sheet
Supersedes data of 1997 Jun 02
DATA SHEET
handbook, halfpage
PZT2222A
NPN switching transistor
DISCRETE SEMICONDUCTORS
M3D087
1999 Apr 14

Related parts for PZT2222A,115

PZT2222A,115 Summary of contents

Page 1

DATA SHEET handbook, halfpage PZT2222A NPN switching transistor Product data sheet Supersedes data of 1997 Jun 02 DISCRETE SEMICONDUCTORS M3D087 1999 Apr 14 ...

Page 2

... NXP Semiconductors NPN switching transistor FEATURES • High current (max. 600 mA) • Low voltage (max. 40 V). APPLICATIONS • Switching and linear amplification. DESCRIPTION NPN switching transistor in a SOT223 plastic package. PNP complement: PZT2907A. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). ...

Page 3

... NXP Semiconductors NPN switching transistor THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient th j-a R thermal resistance from junction to soldering point th j-s Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook” ...

Page 4

... NXP Semiconductors NPN switching transistor handbook, full pagewidth = 9 500 µ µ Ω 325 Ω 325 Ω −3 29 Ω. Oscilloscope input impedance Z i 1999 Apr (probe) oscilloscope 450 Ω ≤ 160 Ω. C Fig.2 Test circuit for switching times (probe) oscilloscope 450 Ω ...

Page 5

... NXP Semiconductors NPN switching transistor PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads DIMENSIONS (mm are the original dimensions) A UNIT 1.8 0.10 0.80 3.1 mm 1.5 0.01 0.60 2.9 OUTLINE VERSION IEC SOT223 1999 Apr scale 0.32 6.7 3 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

Related keywords