2STF2550 STMicroelectronics, 2STF2550 Datasheet - Page 3
![IC TRANS PNP 50V 5A SOT 89](/photos/5/65/56548/497-sot-89_series_sml.jpg)
2STF2550
Manufacturer Part Number
2STF2550
Description
IC TRANS PNP 50V 5A SOT 89
Manufacturer
STMicroelectronics
Datasheet
1.2STF2550.pdf
(8 pages)
Specifications of 2STF2550
Transistor Type
PNP
Current - Collector (ic) (max)
5A
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
550mV @ 300mA, 3A
Dc Current Gain (hfe) (min) @ Ic, Vce
110 @ 2A, 2V
Power - Max
1.4W
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 50 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 5 A
Maximum Dc Collector Current
- 10 A
Power Dissipation
1.4 W
Dc Collector/base Gain Hfe Min
70
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-10028-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2STF2550
Manufacturer:
ST
Quantity:
34 000
Part Number:
2STF2550
Manufacturer:
ST
Quantity:
20 000
2STF2550 - 2STN2550
2
(T
Table 4.
1.
V
Electrical characteristics
V
V
case
V
V
(BR)CEO
Symbol
CE(sat)
BE(sat)
Pulsed duration = 300 μs, duty cycle ≤1.5%
h
(BR)CBO
(BR)EBO
C
I
I
FE
CBO
EBO
t
t
CBO
on
off
(1)
= 25 °C unless otherwise specified)
(1)
(1)
(1)
Electrical characteristics
Collector cut-off current
(I
Emitter cut-off current
(I
Collector-base
breakdown voltage
(I
Collector-emitter
breakdown voltage
(I
Emitter-base breakdown
voltage (I
DC current gain
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
Collector-base
capacitance (I
Resistive load
Turn-on time
Turn-off time
E
C
E
B
= 0)
= 0)
= 0)
= 0)
Parameter
C
= 0)
E
= 0)
V
V
I
I
I
I
I
I
I
I
I
V
I
I
C
C
E
C
C
C
C
C
C
C
B1
CB
EB
CB
= -100 μA
= -3 A
= -3 A
= -1.5 A
= -100 μA
= -10 mA
= -0.5 A
= -2 A
= -3 A
= -5 A
= -I
= -50 V
= -4 V
= -10 V, f = 1 MHz
Test conditions
B2
= -150 mA
I
I
B
B
V
V
V
V
V
= -300 mA
= -300 mA
CC
CE
CE
CE
CE
= -10 V
= -2 V
= -2 V
= -2 V
= -5 V
Min.
Electrical characteristics
110
-50
-50
80
-5
-0.39
Typ.
3 00
350
70
30
80
-1
-0.55
Max.
-0.1
-0.1
-1.2
350
Unit
μA
μA
pF
ns
ns
V
V
V
V
V
3/8