MJE521 STMicroelectronics, MJE521 Datasheet - Page 2
![TRANSISTOR NPN 40V 4A SOT-32](/photos/5/70/57056/sot-32_sml.jpg)
MJE521
Manufacturer Part Number
MJE521
Description
TRANSISTOR NPN 40V 4A SOT-32
Manufacturer
STMicroelectronics
Datasheet
1.MJE521.pdf
(4 pages)
Specifications of MJE521
Transistor Type
NPN
Current - Collector (ic) (max)
4A
Voltage - Collector Emitter Breakdown (max)
40V
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 1A, 1V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
TO-126-3
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
4 V
Maximum Dc Collector Current
4 A
Power Dissipation
40 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
4 A
Dc Collector/base Gain Hfe Min
40
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Vce Saturation (max) @ Ib, Ic
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-2583-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MJE521
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
MJE521
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
2/4
V
Pulsed: Pulse duration = 300 s, duty cycle
Symbol
R
CEO(sus)
I
I
thj-amb
h
CBO
EBO
FE
Thermal Resistance Junction-ambient
Collector Cut-off
Current (I
Emitter Cut-off Current
(I
Collector-Emitter
Sustaining Voltage
(I
DC Current Gain
C
B
= 0)
= 0)
Parameter
E
= 0)
1.5%
V
V
I
I
C
C
CB
EB
= 0.1 A
= 1 A
= 4 V
= 40 V
case
= 25
Test Conditions
o
C unless otherwise specified)
V
CE
= 1 V
Max
Min.
40
40
Typ.
3.12
Max.
100
100
o
Unit
C/W
V
A
A