TIP112 STMicroelectronics, TIP112 Datasheet - Page 2
![TRANS NPN DARL 100V 2A TO-220](/photos/1/39/13943/to-220_sml.jpg)
TIP112
Manufacturer Part Number
TIP112
Description
TRANS NPN DARL 100V 2A TO-220
Manufacturer
STMicroelectronics
Type
Power, Switchr
Specifications of TIP112
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
2.5V @ 8mA, 2A
Current - Collector Cutoff (max)
2mA
Dc Current Gain (hfe) (min) @ Ic, Vce
1000 @ 1A, 4V
Power - Max
2W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
100 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
100 V
Maximum Dc Collector Current
2 A
Maximum Collector Cut-off Current
1000 uA
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
1000
Current, Gain
500
Current, Input
50 mA
Current, Output
2 A
Package Type
TO-220
Polarity
NPN
Power Dissipation
50 W
Primary Type
Si
Resistance, Thermal, Junction To Ambient
62.5
Voltage, Collector To Emitter, Saturation
2.5 V
Voltage, Input
5 V
Voltage, Output
100 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-2533-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TIP112
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
TIP112,TIP115,TIP117,TIP110,TIP107,TIP105,TIP102,
Manufacturer:
ST
0
TIP110/TIP112/TIP115/TIP117
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
For PNP types voltage and current values are negative.
2/6
Safe Operating Areas
V
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
V
Symbol
R
R
CEO(sus)
CE(sat)
V
thj-case
h
I
I
I
thj-amb
CEO
CBO
EBO
BE
FE
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Collector Cut-off
Current (I
Collector Cut-off
Current (I
Emitter Cut-off Current
(I
Collector-Emitter
Sustaining Voltage
(I
Collector-Emitter
Saturation Voltage
Base-Emitter Voltage
DC Current Gain
C
B
= 0)
= 0)
Parameter
B
E
= 0)
= 0)
V
V
V
I
for TIP110/115
for TIP112/117
I
I
I
I
C
C
C
C
C
CE
CB
EB
= 30 mA
= 2 A
= 2 A
= 1 A
= 2 A
= 5 V
= Half Rated V
= Rated V
case
= 25
Test Conditions
V
V
V
o
CBO
I
C unless otherwise specified)
CE
CE
CE
B
= 8 mA
= 4 V
= 4 V
= 4 V
CEO
Derating Curve
Max
Max
1000
Min.
100
500
60
Typ.
62.5
2.5
Max.
2.5
2.8
2
1
2
o
o
Unit
mA
mA
mA
C/W
C/W
V
V
V
V