TIP102 STMicroelectronics, TIP102 Datasheet - Page 2

• Manufacturer Part Number: TIP102
• Description: TRANS NPN DARL 100V 8A TO-220
• Manufacturer: STMicroelectronics
• Type: Amplifier, Powerr

Specifications of TIP102

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 2.5V @ 80mA, 8A
• Current - Collector Cutoff (max): 50µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 1000 @ 3A, 4V
• Power - Max: 2W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 100 V
• Maximum Dc Collector Current: 8 A
• Maximum Collector Cut-off Current: 50 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 200
• Current, Base: 1 A
• Current, Collector: 8 A
• Current, Collector Cutoff: 50 μA
• Current, Gain: 200
• Current, Input: 1 A
• Current, Output: 8 A
• Gain, Dc Current, Maximum: 20000
• Gain, Dc Current, Minimum: 1000
• Package Type: TO-220
• Polarity: NPN
• Power Dissipation: 80 W
• Primary Type: Si
• Resistance, Thermal, Junction To Ambient: 62.5
• Temperature, Operating, Maximum: 150 °C
• Thermal Resistance, Junction To Ambient: 62.5 °C/W
• Voltage, Collector To Base: 100 V
• Voltage, Collector To Emitter: 100 V
• Voltage, Collector To Emitter, Saturation: 2.5 V
• Voltage, Emitter To Base: 5 V
• Voltage, Input: 5 V
• Voltage, Output: 100 V
• Voltage, Saturation, Collector To Emitter: 2.5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-2546-5

TIP102 / TIP107
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
For PNP types voltage and current values are negative.
2/4
Safe Operating Area
V
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
V
Symbol
R
R
CEO(sus)
CE(sat)
V
thj-case
I
I
I
h
thj-amb
V
CEO
CBO
EBO
BE
FE
F
*
*
*
*
* Collector-Emitter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Collector Cut-off
Current (I
Collector Cut-off
Current (I
Emitter Cut-off Current
(I
Sustaining Voltage
Collector-Emitter
Saturation Voltage
Base-Emitter Voltage
DC Current Gain
Forward Voltage of
Commutation Diode
(I
(I
C
B
B
= 0)
= 0)
= 0)
Parameter
B
E
= 0)
= 0)
V
V
V
I
I
I
I
I
I
I
C
C
C
C
C
C
F
CE
CB
EB
= - I
= 30 mA
= 3 A
= 8 A
= 8 A
= 3 A
= 8 A
= 5 V
= 50 V
= 100 V
case
C
= 10 A
= 25
Test Conditions
o
C unless otherwise specified)
I
I
V
V
V
B
B
CE
CE
CE
= 6 mA
= 80 mA
= 4 V
= 4 V
= 4 V
Max
Max
1000
Min.
100
200
Typ.
1.56
62.5
20000
Max.
2.5
2.8
2.8
50
50
8
2
o
o
Unit
mA
C/W
C/W
V
V
V
V
V
A
A