MJE3055T STMicroelectronics, MJE3055T Datasheet

TRANSISTOR NPN 60V 10A TO-220

MJE3055T

Manufacturer Part Number
MJE3055T
Description
TRANSISTOR NPN 60V 10A TO-220
Manufacturer
STMicroelectronics
Datasheet

Specifications of MJE3055T

Transistor Type
NPN
Current - Collector (ic) (max)
10A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
8V @ 3.3A, 10A
Current - Collector Cutoff (max)
700µA
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 4A, 4V
Power - Max
75W
Frequency - Transition
2MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
60V
Collector-base Voltage(max)
70V
Emitter-base Voltage (max)
5V
Collector Current (dc) (max)
10A
Dc Current Gain (min)
20
Power Dissipation
75W
Frequency (max)
2MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
10 A
Continuous Collector Current
10 A
Dc Collector/base Gain Hfe Min
20
Maximum Operating Frequency
2 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2573-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MJE3055T
Manufacturer:
TE
Quantity:
30 000
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MJE3055T
Manufacturer:
ST
Quantity:
10 000
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MJE3055T
Manufacturer:
ST
Quantity:
7 595
Price:
DESCRIPTION
The MJE3055T is a silicon Epitaxial-Base NPN
transistor in Jedec TO-220 package. It is
intended
general-purpose amplifiers. The complementary
PNP type is MJE2955T.
ABSOLUTE MAXIMUM RATINGS
For PNP types voltage and current values are negative.
September 2003
Symbol
STMicroelectronics PREFERRED
SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
V
V
V
T
P
CEO
CBO
EBO
I
T
I
stg
C
B
tot
j
COMPLEMENTARY SILICON POWER TRANSISTORS
Collector-Emitter Voltage (I
Collector-Base Voltage (I
Emitter-Base Voltage (I
Collector Current
Base Current
Total Power Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
for
®
power switching
Parameter
C
E
= 0)
circuits
= 0)
B
case
= 0)
25
and
o
C
NPN
PNP
INTERNAL SCHEMATIC DIAGRAM
MJE3055T
MJE2955T
-55 to 150
TO-220
Value
150
10
60
70
75
5
6
MJE2955T
MJE3055T
1
2
3
Unit
o
o
W
V
V
V
A
A
C
C
1/4

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MJE3055T Summary of contents

Page 1

... COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package intended for power switching general-purpose amplifiers. The complementary PNP type is MJE2955T. ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Collector-Emitter Voltage (I ...

Page 2

... MJE2955T / MJE3055T THERMAL DATA R Thermal Resistance Junction-case thj-case ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CEO Current ( Collector Cut-off CEX Current (V = 1.5V Collector Cut-off CBO Current ( Emitter Cut-off Current EBO ( Collector-Emitter CEO(sus) Sustaining Voltage ( Collector-Emitter CE(sat) Sustaining Voltage V Base-Emitter on BE(on) Voltage h DC Current Gain ...

Page 3

... F2 1.14 G 4.95 G1 2.40 H2 10.00 L2 16.40 L4 13.00 L5 2.65 L6 15.25 L7 6.20 L9 3.50 M 2.60 DIA. 3.75 MJE2955T / MJE3055T inch MAX. MIN. TYP. 4.60 0.173 1.32 0.048 2.72 0.094 0.70 0.019 0.88 0.024 1.70 0.044 1.70 0.044 5.15 0.194 2.70 0.094 10.40 0.394 0.645 14 ...

Page 4

... MJE2955T / MJE3055T Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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