D45H11 STMicroelectronics, D45H11 Datasheet
D45H11
Manufacturer Part Number
D45H11
Description
TRANSISTOR PNP -80V -10A TO-220
Manufacturer
STMicroelectronics
Type
Amplifier, Powerr
Specifications of D45H11
Transistor Type
PNP
Current - Collector (ic) (max)
10A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
1V @ 400mA, 8A
Current - Collector Cutoff (max)
10µA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 4A, 1V
Power - Max
50W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
PNP
Number Of Elements
1
Collector-emitter Voltage
80V
Collector-base Voltage
80V
Emitter-base Voltage
5V
Collector Current (dc) (max)
20A
Dc Current Gain (min)
60
Power Dissipation
50W
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
- 5 V
Maximum Dc Collector Current
10 A
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
- 10 A
Dc Collector/base Gain Hfe Min
60
Current, Collector
-10 A
Current, Gain
120
Polarity
PNP
Primary Type
Si
Resistance, Thermal, Junction To Case
2.5 °C/W
Voltage, Breakdown, Collector To Emitter
-80 V
Voltage, Collector To Emitter
-80 V
Voltage, Collector To Emitter, Saturation
-1 V
Voltage, Emitter To Base
-5 V
Dc
0649
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Compliant
Other names
497-2578-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
D45H11
Manufacturer:
FUJITSU
Quantity:
31
Part Number:
D45H11
Manufacturer:
NS/国半
Quantity:
20 000
Company:
Part Number:
D45H11G
Manufacturer:
ON Semiconductor
Quantity:
19
Part Number:
D45H11G
Manufacturer:
ON/安森美
Quantity:
20 000
APPLICATIONS
DESCRIPTION
The D45H5, D45H8 and D45H11 are silicon
Multi-Epitaxial Planar PNP transistors mounted in
Jedec TO-220 plastic package.
They are inteded for various switching and
general purpose applications.
D45H8, D45H11 are complementary with D44H8,
D44H11.
ABSOLUTE MAXIMUM RATINGS
Symbol
STMicroelectronics PREFERRED
SALESTYPES
LOW COLLECTOR-EMITTER SATURATION
VOLTAGE
FAST SWITCHING SPEED
GENERAL PURPOSE SWITCHING AND
AMPLIFIER
V
V
T
P
I
CEO
EBO
I
CM
I
T
stg
C
B
tot
j
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current
Base Current
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
®
Parameter
c
C
PNP SILICON POWER TRANSISTORS
25
= 0)
B
o
C
= 0)
INTERNAL SCHEMATIC DIAGRAM
D45H5
-45
D45H8 \ D45H11
-65 to 150
D45H8
Value
150
-60
-10
-20
50
TO-220
-5
-5
1
D45H11
2
-80
3
D45H5
Unit
o
o
W
V
V
A
A
A
C
C
1/5
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D45H11 Summary of contents
Page 1
... FAST SWITCHING SPEED APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER DESCRIPTION The D45H5, D45H8 and D45H11 are silicon Multi-Epitaxial Planar PNP transistors mounted in Jedec TO-220 plastic package. They are inteded for various switching and general purpose applications. D45H8, D45H11 are complementary with D44H8, D44H11 ...
Page 2
... B V Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage h DC Current Gain FE Pulsed: Pulse duration = 300 s, duty cycle Safe Operating Area 2 unless otherwise specified) case Test Conditions V = rated V CB CEO -100 mA C for D45H5 for D45H8 for D45H11 - Derating Curves Max 2 ...
Page 3
... D45H5/D45H8/D45H11 DIM. MIN. A 4.40 C 1.23 D 2.40 E 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2.40 H2 10. 13.00 L5 2.65 L6 15.25 L7 6.20 L9 3.50 M DIA. 3.75 4/5 TO-220 MECHANICAL DATA mm TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 16.40 14.00 2.95 15.75 6.60 3 ...