MJE2955T STMicroelectronics, MJE2955T Datasheet - Page 2

• Manufacturer Part Number: MJE2955T
• Description: TRANSISTOR PNP 60V 10A TO-220
• Manufacturer: STMicroelectronics

Specifications of MJE2955T

• Transistor Type: PNP
• Current - Collector (ic) (max): 10A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 8V @ 3.3A, 10A
• Current - Collector Cutoff (max): 700µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 4A, 4V
• Power - Max: 75W
• Frequency - Transition: 2MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 10 A
• Power Dissipation: 75 W
• Continuous Collector Current: 10 A
• Dc Collector/base Gain Hfe Min: 20
• Maximum Operating Frequency: 2 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2621-5

MJE2955T / MJE3055T
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
For PNP type voltage and current values are negative.
2/4
V
Pulsed: Pulse duration = 300 s, duty cycle
V
Symbol
V
R
CEO(sus)
CE(sat)
BE(on)
thj-case
I
I
I
I
h
CEO
CBO
CEX
EBO
f
FE
T
Thermal Resistance Junction-case
Collector Cut-off
Current (I
Collector Cut-off
Current (V
Collector Cut-off
Current (I
Emitter Cut-off Current
(I
Collector-Emitter
Sustaining Voltage
(I
Collector-Emitter
Sustaining Voltage
Base-Emitter on
Voltage
DC Current Gain
Transistor Frequency
C
B
= 0)
= 0)
Parameter
B
E
BE
= 0)
= 0)
= 1.5V)
2 %
V
V
T
V
T
V
I
I
I
I
I
I
I
f = 500 KHz
C
C
C
C
C
C
C
case =
case =
CE
CE
CBO
EBO
= 200 mA
= 4 A
= 10 A
= 4 A
= 4 A
= 10 A
= 500 mA
= 30 V
= 70 V
case
= 5 V
= 70 V
150
150
= 25
Test Conditions
o
o
C
C
o
C unless otherwise specified)
I
V
I
V
V
V
B
B
CE
CE
CE
CE
= 3.3 A
= 0.4 A
= 4 V
= 4 V
= 4 V
= 10 V
Max
Min.
60
20
5
2
Typ.
1.66
Max.
700
1.1
1.8
10
70
1
5
1
5
8
o
Unit
MHz
mA
mA
mA
mA
mA
C/W
V
V
V
V
A