2N3700 STMicroelectronics, 2N3700 Datasheet - Page 3

TRANSISTOR NPN 80V 1A TO-18

2N3700

Manufacturer Part Number
2N3700
Description
TRANSISTOR NPN 80V 1A TO-18
Manufacturer
STMicroelectronics
Type
Amplifier, General Purposer
Datasheets

Specifications of 2N3700

Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
500mW
Frequency - Transition
100MHz
Mounting Type
Through Hole
Package / Case
TO-18-3, TO-206AA, Metal Case
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
7 V
Continuous Collector Current
1 A
Maximum Dc Collector Current
1 A
Power Dissipation
500 mW
Maximum Operating Frequency
100 MHz
Dc Collector/base Gain Hfe Min
100
Current, Collector
1 A
Current, Collector Cutoff
10 nA
Current, Gain
300
Frequency
100 MHz
Gain, Dc Current, Maximum
300
Gain, Dc Current, Minimum
100
Package Type
TO-18
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Case
97 °C/W
Temperature, Operating, Maximum
200 °C
Temperature, Operating, Minimum
-65 °C
Thermal Resistance, Junction To Ambient
350 °C/W
Voltage, Breakdown, Collector To Emitter
80 V
Voltage, Collector To Base
140 V
Voltage, Collector To Emitter
80 V
Voltage, Collector To Emitter, Saturation
0.5 V
Voltage, Emitter To Base
7 V
Voltage, Saturation, Collector To Emitter
0.5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-3108-5

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2N3700
2
Table 3.
Note:
V
V
V
V
V
Symbol
(BR)CEO
CE(sat)
r
BE(sat)
(BR)CBO
(BR)EBO
bb’
C
C
I
I
h
CBO
EBO
h
EBO
CBO
f
FE
T
fe
C
b’c
(1)
(1)
(1)
Electrical characteristics
(T
(1)
Collector cut-off current
(I
Emitter cut-off current
(I
Collector-base breakdown
voltage (I
Collector-emitter breakdown
voltage (I
Emitter-base breakdown voltage
(I
Collector-emitter saturation
voltage
Base-emitter saturation voltage
DC current gain
Small signal current gain
Transition frequency
Emitter-base capacitance
Collector-base capacitance
Feedback time constant
CASE
Electrical characteristics
Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
E
C
C
= 0)
= 0)
= 0)
= 25°C; unless otherwise specified)
E
B
Parameter
= 0)
= 0)
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
T
I
f = 1kHz
I
f = 20MHz
I
f = 1MHz
I
f = 1MHz
I
f = 4MHz
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
E
C
amb
CB
CB
EB
= 100µA
= 30mA
= 100µA
= 150mA
= 0.5A
= 150mA
= 0.1mA
= 10mA
= 150mA
= 500mA
= 1A
= 150mA
= 1mA
= 50mA
= 0
= 0
= 10mA
= 5V
= 90V
= 90V
= -55°C
Test Conditions
T
I
I
I
V
V
V
V
V
V
V
V
B
B
B
V
V
amb
V
CE
CE
CE
CE
CE
CE
EB
CB
CE
CE
= 15mA
= 50mA
= 15mA
CB
= 10V
= 10V
= 10V
= 10V
= 10V
= 5V
= 0.5V
= 10V
= 150°C
= 10V
= 10V
= 10V
Min.
140
100
80
50
90
50
15
40
80
25
7
Typ.
Electrical characteristics
100
60
12
Max.
300
400
400
0.2
0.5
1.1
10
10
10
MHz
Unit
nA
µA
nA
pF
pF
ps
V
V
V
V
V
V
3/7

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