2N5415 STMicroelectronics, 2N5415 Datasheet

TRANSISTOR PNP -200V -1A TO-39

2N5415

Manufacturer Part Number
2N5415
Description
TRANSISTOR PNP -200V -1A TO-39
Manufacturer
STMicroelectronics
Type
Driver, High Voltage, Switchr
Datasheets

Specifications of 2N5415

Transistor Type
PNP
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
200V
Vce Saturation (max) @ Ib, Ic
2.5V @ 5mA, 50mA
Current - Collector Cutoff (max)
50µA
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 50mA, 10V
Power - Max
1W
Frequency - Transition
15MHz
Mounting Type
Through Hole
Package / Case
TO-39-3, TO-205AD, Metal Can
Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
200 V
Emitter- Base Voltage Vebo
- 4 V
Continuous Collector Current
- 1 A
Maximum Dc Collector Current
1 A
Power Dissipation
10 W
Maximum Operating Frequency
15 MHz
Dc Collector/base Gain Hfe Min
30
Current, Base
-0.5 A
Current, Collector
-1 A
Current, Collector Cutoff
-50 μA (Max.) @ VCB ≥ -175 V
Current, Gain
150
Frequency
15 MHz
Gain, Dc Current, Maximum
150
Gain, Dc Current, Minimum
30
Package Type
TO-39
Polarity
PNP
Primary Type
Si
Resistance, Thermal, Junction To Case
17.5 °C/W
Voltage, Breakdown, Collector To Emitter
-200 V
Voltage, Collector To Base
-200 V
Voltage, Collector To Emitter
-200 V
Voltage, Collector To Emitter, Saturation
-2.5 V
Voltage, Emitter To Base
-4 V
Voltage, Saturation, Collector To Emitter
-2.5 V
Number Of Elements
1
Collector-emitter Voltage
200V
Collector-base Voltage
200V
Emitter-base Voltage
4V
Collector Current (dc) (max)
1A
Dc Current Gain (min)
30
Frequency (max)
15MHz
Operating Temp Range
-65C to 200C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2593-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
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DESCRIPTION
The 2N5415, 2N5416 are high voltage silicon
epitaxial planar PNP transistors in Jedec TO-39
metal case designed for use in consumer and
industrial line-operated applications.
These devices are particularly suited as drivers in
high-voltage low current inverters, switching and
series regulators.
ABSOLUTE MAXIMUM RATINGS
December 2000
Symbol
STMicroelectronics PREFERRED
SALESTYPES
PNP TRANSISTORS
V
V
V
T
P
P
CBO
CEO
EBO
I
I
stg
C
B
tot
tot
Collector-Base Voltage (I
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Base Current
Total Dissipation at T
Total Dissipation at T
Storage Temperature
®
Parameter
c
amb
C
25
E
= 0)
= 0)
50
B
o
C
= 0)
o
C
SILICON PNP TRANSISTORS
INTERNAL SCHEMATIC DIAGRAM
2N5415
-200
-200
-4
-65 to 200
Value
-0.5
10
-1
1
TO-39
2N5416
-350
-300
-6
2N5415
2N5416
Unit
o
W
W
V
V
V
A
A
C
1/4

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2N5415 Summary of contents

Page 1

... STMicroelectronics PREFERRED SALESTYPES PNP TRANSISTORS DESCRIPTION The 2N5415, 2N5416 are high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators ...

Page 2

... THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CBO Current ( Collector Cut-off CEO Current ( Emitter Cut-off Current EBO ( Collector-Emitter CER Sustaining Voltage V Collector-Emitter CEO(sus) Sustaining Voltage V Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter Voltage ...

Page 3

... TO-39 MECHANICAL DATA DIM. MIN TYP. MAX. MIN. 0.500 0.49 6.6 8.5 9.4 0.200 1.2 0 (typ 2N5415 / 2N5416 inch TYP. MAX. 0.019 0.260 0.334 0.370 0.047 0.035 A P008B 3/4 ...

Page 4

... Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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