2STW4466 STMicroelectronics, 2STW4466 Datasheet - Page 3

• Manufacturer Part Number: 2STW4466
• Description: TRANS NPN HP BIPO 80V TO-247
• Manufacturer: STMicroelectronics

Specifications of 2STW4466

• Transistor Type: NPN
• Current - Collector (ic) (max): 6A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 600mA, 6A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 2A, 4V
• Power - Max: 60W
• Frequency - Transition: 20MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 80V
• Power Dissipation Pd: 60W
• Dc Collector Current: 6A
• Dc Current Gain Hfe: 50
• Transistor Case Style: TO-247
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 2STW4466; 497-7065-5

2STW4466
2
Electrical characteristics
(T
Table 4.
V
Pulsed duration = 300 µs, duty cycle ≤ 1.5%
V
V
V
Symbol
CE(sat)
case
V
(BR)EBO
(BR)CBO
(BR)CEO
C
I
I
BE
h
CBO
EBO
t
t
CBO
f
stg
on
FE
t
T
f
(1)
= 25°C; unless otherwise specified)
(1)
Collector cut-off current
(I
Emitter cut-off current
(I
Emitter-base breakdown
voltage (I
Collector-base breakdown
voltage (I
Collector-emitter breakdown
voltage (I
Collector-emitter saturation
voltage
Base-emitter voltage
DC current gain
Transition frequency
Collector-base capacitance
(I
Resistive load
Turn-on time
Storage time
Fall time
Electrical characteristics
E
C
E
= 0)
= 0)
= 0)
C
E
B
Parameter
= 0)
= 0)
= 0)
V
V
I
I
I
I
I
V
I
I
V
I
I
E
C
C
C
C
C
C
C
B1
CB
EB
CE
CB
= 1 mA
= 100 µA
= 50 mA
= 2
= 6 A
= 2 A
= 0.5 A
= 3 A
= -I
= 6 V
= 100 V
= 4 V
= 10 V
Test conditions
B2
= 0.3 A
I
I
V
V
V
I
f = 1 MHz
B
B
C
CE
CE
CC
= 200 mA
= 600 mA
= 6 A
= 4 V
= 12 V
= 30 V
Min.
100
80
50
6
Electrical characteristics
Typ.
0.15
1.5
0.1
20
50
Max.
120
0.1
0.1
0.6
1.5
1.5
MHz
Unit
µA
µA
pF
ns
ns
ns
V
V
V
V
V
V
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