BU508AF STMicroelectronics, BU508AF Datasheet - Page 4

TRANS NPN HV CRT ISOWATT218FX

BU508AF

Manufacturer Part Number
BU508AF
Description
TRANS NPN HV CRT ISOWATT218FX
Manufacturer
STMicroelectronics
Datasheet

Specifications of BU508AF

Transistor Type
NPN
Current - Collector (ic) (max)
8A
Voltage - Collector Emitter Breakdown (max)
700V
Vce Saturation (max) @ Ib, Ic
1V @ 1.6A, 4.5A
Current - Collector Cutoff (max)
200µA
Dc Current Gain (hfe) (min) @ Ic, Vce
10 @ 100mA, 5V
Power - Max
50W
Mounting Type
Through Hole
Package / Case
ISOWATT218FX
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
700V
Power Dissipation Pd
50W
Dc Collector Current
8A
Dc Current Gain Hfe
30
Operating Temperature Range
-65°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Other names
497-8748-5

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Electrical characteristics
2
4/11
(T
Table 4.
1. Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %
V
Electrical characteristics
V
V
CEO(sus)
case
Symbol
CE(sat)
BE(sat)
h
I
I
FE
CES
EBO
t
t
s
f
= 25°C unless otherwise specified)
(1)
(1)
(1)
(1)
Electrical characteristics
Collector cut-off current
(V
Emitter cut-off current
(I
Collector-emitter
sustaining voltage
(I
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
DC current gain
Inductive load
Storage time
Fall time
C
C
BE
=0)
=0)
=0)
Parameter
V
V
V
I
I
I
I
I
I
V
L
C
C
C
C
C
C
BB(off)
CE
CE
EB
BE(off)
= 100mA
= 4.5A
= 4.5A
= 0.1A
= 4.5A
= 4.5A
= 1500V
= 1500V;
= 9V
Test conditions
= 4.5µH
= -2.7V f
I
B(on)
T
h
C
V
V
I
= 16KHz
= 125°C
B
CE
CE
I
= 1.6A
= 0.5A
B
= 2A
= 5V
= 5V
Min.
700
10
5
Typ.
2.5
0.2
Max.
0.2
1.1
30
2
1
1
BU508AF
Unit
mA
mA
mA
µs
µs
V
V
V

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