2N3771 STMicroelectronics, 2N3771 Datasheet

TRANSISTOR NPN 40V 30A TO-3

2N3771

Manufacturer Part Number
2N3771
Description
TRANSISTOR NPN 40V 30A TO-3
Manufacturer
STMicroelectronics
Datasheet

Specifications of 2N3771

Transistor Type
NPN
Current - Collector (ic) (max)
30A
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
4V @ 6A, 30A
Current - Collector Cutoff (max)
10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
15 @ 15A, 4V
Power - Max
150W
Frequency - Transition
200kHz
Mounting Type
Chassis Mount
Package / Case
TO-204, TO-3
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
30 A
Power Dissipation
150 W
Continuous Collector Current
30 A
Dc Collector/base Gain Hfe Min
5
Maximum Operating Frequency
0.2 MHz
Number Of Elements
1
Collector-emitter Voltage
40V
Collector-base Voltage
50V
Emitter-base Voltage
5V
Collector Current (dc) (max)
30A
Dc Current Gain (min)
15
Frequency (max)
200KHz
Operating Temp Range
-65C to 200C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
2 +Tab
Package Type
TO-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2584-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N3771
Manufacturer:
ST
0
Company:
Part Number:
2N3771
Quantity:
12
Part Number:
2N3771G
Manufacturer:
ON
Quantity:
100
Part Number:
2N3771G
Manufacturer:
ON Semiconductor
Quantity:
1 600
Part Number:
2N3771G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
2N3771P
Manufacturer:
ST
0
DESCRIPTION
The 2N3771, 2N3772 are silicon epitaxial-base
NPN transistors mounted in Jedec Jedec TO-3
metal case. They are intended for linear
amplifiers and inductive switching applications.
ABSOLUTE MAXIMUM RATINGS
December 2000
Symbol
STMicroelectronics PREFERRED
SALESTYPES
V
V
V
V
T
P
I
I
CEO
CEV
CBO
EBO
I
CM
I
BM
stg
C
B
tot
Collector-Emitter Voltage (I
Collector-Emitter Voltage (V
Collector-Base Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Total Dissipation at T
Storage Temperature
®
HIGH POWER NPN SILICON TRANSISTOR
Parameter
c
C
25
B
= 0)
= 0)
E
BE
o
C
= 0)
= -1.5V)
INTERNAL SCHEMATIC DIAGRAM
2N3771
7.5
30
30
15
40
50
50
5
-65 to 200
1
Value
150
TO-3
2
2N3772
100
60
80
20
30
15
7
5
2N3771
2N3772
Unit
o
W
V
V
V
V
A
A
A
A
C
1/4

Related parts for 2N3771

2N3771 Summary of contents

Page 1

... HIGH POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Collector-Emitter Voltage (I ...

Page 2

... CB j for 2N3771 for 2N3772 for 2N3771 for 2N3772 V = 100 V CB for 2N3771 for 2N3772 0 for 2N3771 for 2N3772 100 C BE for 2N3771 for 2N3772 for 2N3771 for 2N3772 for 2N3771 1 for 2N3772 for 2N3771 for 2N3772 for 2N3771 ...

Page 3

... R 4.00 U 38.50 V 30.00 TO-3 MECHANICAL DATA mm TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30. 2N3771/2N3772 inch MIN. TYP. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 P003F MAX. 0.516 0.045 0.065 0.351 0.787 ...

Page 4

... Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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