BUL89 STMicroelectronics, BUL89 Datasheet

TRANSISTOR POWER NPN TO-220

BUL89

Manufacturer Part Number
BUL89
Description
TRANSISTOR POWER NPN TO-220
Manufacturer
STMicroelectronics
Datasheet

Specifications of BUL89

Transistor Type
NPN
Current - Collector (ic) (max)
12A
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
5V @ 2.4A, 12A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
10 @ 5A, 5V
Power - Max
110W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
400V
Power Dissipation Pd
110W
Dc Collector Current
12A
Dc Current Gain Hfe
10
Transistor Case Style
TO-220
No. Of Pins
3
Svhc
No SVHC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Other names
497-6682-5
BUL89

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUL89
Manufacturer:
ST
Quantity:
15 000
Part Number:
BUL89
Manufacturer:
Vishay
Quantity:
5 000
Part Number:
BUL89
Manufacturer:
ST
0
APPLICATIONS
DESCRIPTION
The BUL89 is manufactured using high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
structure to enhance switching speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
September 2001
Symbol
HIGH VOLTAGE CAPABILITY
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
LOW BASE-DRIVE REQUIREMENTS
VERY HIGH SWITCHING SPEED
FULLY CHARACTERIZED AT 125
ELECTRONIC TRANSFORMER FOR
HALOGEN LAMPS
SWITCH MODE POWER SUPPLIES
V
V
V
T
P
I
I
CEO
CES
EBO
I
CM
T
I
BM
stg
C
B
tot
j
Collector-Emitter Voltage (V
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current (t
Base Current
Base Peak Current (t
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
®
Parameter
p
c
< 5 ms)
= 25
C
p
= 0)
< 5 ms)
o
B
C
BE
o
C
= 0)
HIGH VOLTAGE FAST-SWITCHING
= 0)
NPN POWER TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
-65 to 150
Value
850
400
110
150
12
25
12
TO-220
9
6
1
2
3
BUL89
Unit
o
o
W
V
V
V
A
A
A
A
C
C
1/6

Related parts for BUL89

BUL89 Summary of contents

Page 1

... APPLICATIONS ELECTRONIC TRANSFORMER FOR HALOGEN LAMPS SWITCH MODE POWER SUPPLIES DESCRIPTION The BUL89 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies ...

Page 2

... BUL89 THERMAL DATA R Thermal Resistance Junction-Case thj-case ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Collector Cut-off CEO Current ( Collector-Emitter CEO(sus) Sustaining Voltage ( Emitter-Base Voltage EBO ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage h DC Current Gain FE INDUCTIVE LOAD t Storage Time ...

Page 3

... DC Current Gain Collector Emitter Saturation Voltage Inductive Load Fall Time DC Current Gain Base Emitter Saturation Voltage Inductive Load Storage Time BUL89 3/6 ...

Page 4

... BUL89 Reverse Biased SOA Figure 1: Inductive Load Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier 4/6 ...

Page 5

... BUL89 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.102 ...

Page 6

... BUL89 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

Related keywords