PMBT3904,235 NXP Semiconductors, PMBT3904,235 Datasheet - Page 5

• Manufacturer Part Number: PMBT3904,235
• Description: TRANS NPN 40V 200MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBT3904,235

• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 250mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 933776000235; PMBT3904 /T3; PMBT3904 /T3

NXP Semiconductors
2004 Jan 12
handbook, halfpage
handbook, halfpage
NPN switching transistor
V CEsat
V
(1) T
(2) T
(3) T
Fig.4
I
(1) T
(2) T
(3) T
Fig.6
(mV)
V BE
C
(mV)
CE
/I
1200
1000
B
800
600
400
200
10
10
= 1 V.
= 10.
10
amb
amb
amb
amb
amb
amb
10
10
3
2
−1
−1
= −55 °C.
= 25 °C.
= 150 °C.
= 150 °C.
= 25 °C.
= −55 °C.
Base-emitter voltage as a function of
collector current.
Collector-emitter saturation voltage as a
function of collector current.
1
1
(1)
(2)
(3)
10
10
(2)
(1)
(3)
10
10
2
2
I C (mA)
I C (mA)
MGU825
MGU823
10
10
3
3
5
handbook, halfpage
V BEsat
(mV)
I
(1) T
(2) T
(3) T
Fig.5
C
/I
1200
1000
B
800
600
400
200
= 10.
amb
amb
amb
10
−1
= −55 °C.
= 25 °C.
= 150 °C.
Base-emitter saturation voltage as a
function of collector current.
1
10
(1)
(2)
(3)
10
PMBT3904
Product data sheet
2
I C (mA)
MGU824
10
3