MMBT5089LT1G ON Semiconductor, MMBT5089LT1G Datasheet
MMBT5089LT1G
Specifications of MMBT5089LT1G
MMBT5089LT1GOS
MMBT5089LT1GOSTR
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MMBT5089LT1G Summary of contents
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... R 417 °C/W qJA −55 to +150 °C J stg MMBT5088LT1G MMBT5089LT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER 3 SOT−23 (TO−236) ...
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ELECTRICAL CHARACTERISTICS (T Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I = 1.0 mAdc Collector −Base Breakdown Voltage (I = 100 mAdc Collector Cutoff Current ( Vdc, I ...
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BANDWIDTH = 1 ≈ 3 1.0 mA 7.0 5.0 300 mA 3 100 200 500 ...
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2.0 1.0 0.7 0.5 0.4 0.3 0.2 0.01 0.02 0.03 0.05 1 25°C J 0 0.4 0 ...
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... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...