MMBT5089LT1G ON Semiconductor, MMBT5089LT1G Datasheet - Page 3

• Manufacturer Part Number: MMBT5089LT1G
• Description: TRANS GP SS NPN 25V LN SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBT5089LT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 25V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 1mA, 10mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 100µA, 5V
• Power - Max: 225mW
• Frequency - Transition: 50MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 25 V
• Emitter- Base Voltage Vebo: 4.5 V
• Continuous Collector Current: 0.05 A
• Maximum Dc Collector Current: 0.05 A
• Power Dissipation: 225 mW
• Maximum Operating Frequency: 50 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 400 at 0.1 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 25V
• Collector-base Voltage: 30V
• Emitter-base Voltage: 4.5V
• Collector Current (dc) (max): 50mA
• Dc Current Gain (min): 400
• Frequency (max): 50MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT5089LT1GOS; MMBT5089LT1GOS; MMBT5089LT1GOSTR

300
200
100
7.0
5.0
3.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
7.0
5.0
3.0
30
20
10
10
70
50
30
20
10
10
10 20
10 20
R
BANDWIDTH = 1.0 Hz
1.0 mA
S
20
≈ 0
3.0 mA
50 100 200
50 100 200
50 100 200
I
Figure 2. Effects of Frequency
C
Figure 6. Total Noise Voltage
= 10 mA
R
Figure 4. Noise Current
S
300 mA
, SOURCE RESISTANCE (OHMS)
10 mA
f, FREQUENCY (Hz)
f, FREQUENCY (Hz)
BANDWIDTH = 1.0 Hz
300 mA
500 1 k 2 k
500 1 k 2 k
500 1 k 2 k
1.0 mA
3.0 mA
100 mA
R
S
≈ 0
I
C
BANDWIDTH = 1.0 Hz
30 mA
100 mA
= 10 mA
5 k 10 k 20 k 50 k 100 k
300 mA
5 k 10 k 20 k 50 k 100 k
5 k 10 k 20 k 50 k 100 k
1.0 mA
I
3.0 mA
C
= 10 mA
10 mA
NOISE CHARACTERISTICS
(V
CE
http://onsemi.com
100 Hz NOISE DATA
30 mA
NOISE VOLTAGE
= 5.0 Vdc, T
3
8.0
4.0
8.0
4.0
7.0
5.0
3.0
16
12
20
12
30
20
10
20
16
A
0
0
0.01 0.02
10
10 20
= 25°C)
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
20
Figure 3. Effects of Collector Current
R
50 100 200
Figure 5. Wideband Noise Figure
50 100 200
S
≈ 0
0.05 0.1
R
R
I
S
S
C
Figure 7. Noise Figure
, SOURCE RESISTANCE (OHMS)
, SOURCE RESISTANCE (OHMS)
, COLLECTOR CURRENT (mA)
BANDWIDTH = 10 Hz to 15.7 kHz
I
C
500 1 k 2 k
500 1 k 2 k
0.2
= 10 mA
0.5
f = 10 Hz
10 mA
100 mA
10 kHz
1.0
5 k 10 k 20 k 50 k 100 k
5 k 10 k 20 k 50 k 100 k
3.0 mA
500 mA
1.0 mA
2.0
30 mA
300 mA
I
100 Hz
C
100 kHz
= 1.0 mA
100 mA
5.0
1.0 kHz
10 mA
10