MMBT5089LT1G ON Semiconductor, MMBT5089LT1G Datasheet - Page 4

• Manufacturer Part Number: MMBT5089LT1G
• Description: TRANS GP SS NPN 25V LN SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBT5089LT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 25V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 1mA, 10mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 100µA, 5V
• Power - Max: 225mW
• Frequency - Transition: 50MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 25 V
• Emitter- Base Voltage Vebo: 4.5 V
• Continuous Collector Current: 0.05 A
• Maximum Dc Collector Current: 0.05 A
• Power Dissipation: 225 mW
• Maximum Operating Frequency: 50 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 400 at 0.1 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 25V
• Collector-base Voltage: 30V
• Emitter-base Voltage: 4.5V
• Collector Current (dc) (max): 50mA
• Dc Current Gain (min): 400
• Frequency (max): 50MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT5089LT1GOS; MMBT5089LT1GOS; MMBT5089LT1GOSTR

1.0
0.8
0.6
0.4
0.2
8.0
6.0
4.0
3.0
2.0
1.0
0.8
4.0
3.0
2.0
1.0
0.7
0.5
0.4
0.3
0.2
0
0.01
0.1
0.01
V
T
V
0.02 0.05 0.1 0.2
CE(sat)
J
BE
0.2
= 25°C
@ V
@ I
CE
V
0.02
C
C
0.5
C
= 5.0 V
CE
/I
cb
ob
Figure 11. “On” Voltages
B
V
I
Figure 12. Capacitance
C
= 5.0 V
R
= 10
, COLLECTOR CURRENT (mA)
, REVERSE VOLTAGE (VOLTS)
1.0
0.03
C
0.5 1.0 2.0 5.0
eb
2.0
0.05
C
5.0
ib
10
0.1
10 20
T
J
20
T
= 25°C
A
= 125°C
Figure 8. DC Current Gain
I
C
http://onsemi.com
50
, COLLECTOR CURRENT (mA)
- 55°C
50
25°C
0.2
100
100
4
0.3
- 0.4
- 0.8
- 1.2
- 1.6
- 2.0
- 2.4
500
300
200
100
70
50
0.01 0.02 0.05 0.1 0.2
1.0
0.5
Figure 10. Current−Gain — Bandwidth Product
V
T
J
CE
= 25°C
2.0
= 5.0 V
Figure 9. Temperature Coefficients
1.0
3.0
I
I
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
5.0
0.5 1.0 2.0 5.0
7.0
2.0
10
3.0
T
20
J
= 25°C to 125°C
30
10 20
5.0
- 55°C to 25°C
50 70 100
50 100
10