MMBTA42 STMicroelectronics, MMBTA42 Datasheet - Page 3
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MMBTA42
Manufacturer Part Number
MMBTA42
Description
TRANSISTOR NPN 300V 0.5A SOT-23
Manufacturer
STMicroelectronics
Datasheet
1.MMBTA42.pdf
(8 pages)
Specifications of MMBTA42
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
300V
Vce Saturation (max) @ Ib, Ic
500mV @ 2mA, 20mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 30mA, 10V
Power - Max
350mW
Frequency - Transition
50MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
300 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
0.5 A
Power Dissipation
350 mW
Maximum Operating Frequency
50 MHz
Dc Collector/base Gain Hfe Min
40
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-2480-2
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MMBTA42
2
Electrical characteristics
(T
Table 4.
Note (2) Pulsed duration = 300 µs, duty cycle ≤ 1.5%
V
V
V
V
case
V
(BR)CEO
Symbol
CE(sat)
BE(sat)
h
(BR)CBO
(BR)EBO
C
I
FE
CBO
CBO
f
T
= 25°C unless otherwise specified)
(2)
(2)
(2)
(2)
Electrical characteristics
Collector cut-off current
(I
Collector-base
breakdown voltage
(I
Collector-emitter
breakdown voltage
(I
Emitter-base breakdown
voltage
(I
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
DC current gain
Transition frequency
Collector-base
capacitance
E
E
B
C
=0)
=0)
=0)
=0)
Parameter
(I
E
= 0)
V
I
I
I
I
I
I
I
I
I
f = 100 MHz
V
C
C
C
C
C
C
C
C
C
CB
CB
= 100 µA
= 1 mA
= 100 µA
= 20 mA
= 20 mA
= 1 mA
= 10 mA
= 30 mA
= 10 mA
= 200 V
= 20 V
Test conditions
V
V
V
V
f = 1 MHz
CE
CE
CE
CE
I
I
B
B
= 10 V
= 10 V
= 10 V
= 20 V
= 2 mA
= 2 mA
Min.
Electrical characteristics
300
300
25
40
40
50
6
Typ.
3
Max.
100
0.5
0.9
MHz
Unit
nA
pF
V
V
V
V
V
3/8