MMBTA42 STMicroelectronics, MMBTA42 Datasheet - Page 3

• Manufacturer Part Number: MMBTA42
• Description: TRANSISTOR NPN 300V 0.5A SOT-23
• Manufacturer: STMicroelectronics

Specifications of MMBTA42

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 10V
• Power - Max: 350mW
• Frequency - Transition: 50MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 300 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 50 MHz
• Dc Collector/base Gain Hfe Min: 40
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-2480-2

MMBTA42
2
Electrical characteristics
(T
Table 4.
Note (2) Pulsed duration = 300 µs, duty cycle ≤ 1.5%
V
V
V
V
case
V
(BR)CEO
Symbol
CE(sat)
BE(sat)
h
(BR)CBO
(BR)EBO
C
I
FE
CBO
CBO
f
T
= 25°C unless otherwise specified)
(2)
(2)
(2)
(2)
Electrical characteristics
Collector cut-off current
(I
Collector-base
breakdown voltage
(I
Collector-emitter
breakdown voltage
(I
Emitter-base breakdown
voltage
(I
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
DC current gain
Transition frequency
Collector-base
capacitance
E
E
B
C
=0)
=0)
=0)
=0)
Parameter
(I
E
= 0)
V
I
I
I
I
I
I
I
I
I
f = 100 MHz
V
C
C
C
C
C
C
C
C
C
CB
CB
= 100 µA
= 1 mA
= 100 µA
= 20 mA
= 20 mA
= 1 mA
= 10 mA
= 30 mA
= 10 mA
= 200 V
= 20 V
Test conditions
V
V
V
V
f = 1 MHz
CE
CE
CE
CE
I
I
B
B
= 10 V
= 10 V
= 10 V
= 20 V
= 2 mA
= 2 mA
Min.
Electrical characteristics
300
300
25
40
40
50
6
Typ.
3
Max.
100
0.5
0.9
MHz
Unit
nA
pF
V
V
V
V
V
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