BC 850C E6327 Infineon Technologies, BC 850C E6327 Datasheet - Page 8
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BC 850C E6327
Manufacturer Part Number
BC 850C E6327
Description
TRANSISTOR NPN AF 45V SOT-23
Manufacturer
Infineon Technologies
Datasheet
1.BC847AE6327.pdf
(15 pages)
Specifications of BC 850C E6327
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
420 @ 2mA, 5V
Power - Max
330mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
420 at 2 mA at 5 V
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.1 A
Power Dissipation
330 mW
Maximum Operating Frequency
250 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BC 850C E6327
BC850CE6327INTR
BC850CE6327XT
SP000010563
BC850CE6327INTR
BC850CE6327XT
SP000010563
Total power dissipation P
BC847BL3/BC848BL3
Permissible Pulse Load
P
BC846/W-BC850/W
P
P
tot max
tot
totmax
DC
mW
300
250
225
200
175
150
125
100
75
50
25
10
10
10
10
0
5
5
0
/P
10
3
2
1
0
-6
totDC
15
10
30
= ƒ(t
-5
45
10
p
60
-4
D
)
=
T
t
75
10
p
-3
90 105 120 °C
tot
t
p
10
= ƒ(T
-2
T
D =
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t
S
s
p
EHP00362
)
T
S
10
150
0
8
Total power dissipation P
BC846W-BC850W
Permissible Puls Load R
BC847BF
K/W
mW
10
300
250
225
200
175
150
125
100
10
10
10
75
50
25
-1
0
2
1
0
10
0
-6
15
10
30
-5
45
10
-4
60
BC846...-BC850...
10
75
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
-3
thJS
90 105 120 °C
tot
10
= ƒ(T
= ƒ (t
-2
2010-06-28
S
p
s
)
)
T
t
p
S
150
10
0