2N2222 STMicroelectronics, 2N2222 Datasheet - Page 2

• Manufacturer Part Number: 2N2222
• Description: TRANSISTOR NPN 30V .8A TO-18
• Manufacturer: STMicroelectronics
• Type: Switchr

Specifications of 2N2222

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 500mW
• Frequency - Transition: 250MHz
• Mounting Type: Through Hole
• Package / Case: TO-18-3, TO-206AA, Metal Case
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.6 A
• Maximum Dc Collector Current: 0.8 A
• Power Dissipation: 1.8 W
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 175 C
• Dc Collector/base Gain Hfe Min: 35
• Current, Collector: 0.8 A
• Current, Gain: 300
• Device Dissipation: 1.8 W
• Frequency: 250 MHz
• Gain, Dc Current, Maximum: 300 @ 150 A, 10 V
• Gain, Dc Current, Minimum: 100 @ 150 mA, 10 V
• Package Type: TO-18
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 83.3 °C/W
• Temperature Range, Junction, Operating: 175 °C
• Thermal Resistance, Junction To Ambient: 300 °C⁄W
• Voltage, Breakdown, Collector To Base: 60 V
• Voltage, Breakdown, Collector To Emitter: 30 V
• Voltage, Breakdown, Emitter To Base: 5 V
• Voltage, Collector To Base: 60 V
• Voltage, Collector To Emitter: 30 V
• Voltage, Collector To Emitter, Saturation: 1.6 V
• Voltage, Emitter To Base: 5 V
• Voltage, Saturation, Collector To Emitter: 0.4 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-3106-5

2N2219A / 2N2222A
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
* Pulsed: Pulse duration = 300 s, duty cycle
2/7
V
V
V
V
V
Symbol
R
(BR)CEO
R
R
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
C
C
thj-case
h
I
I
I
I
h
thj-amb
CBO
CEX
EBO
e(hie)
BEX
FE
EBO
CBO
f
fe
T
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Collector Cut-off
Current (I
Collector Cut-off
Current (V
Base Cut-off Current
(V
Emitter Cut-off Current
(I
Collector-Base
Breakdown Voltage
(I
Collector-Emitter
Breakdown Voltage
(I
Emitter-Base
Breakdown Voltage
(I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
Small Signal Current
Gain
Transition Frequency
Emitter-Base
Capacitance
Collector-Base
Capacitance
Real Part of Input
Impedance
C
E
B
C
BE
= 0)
= 0)
= 0)
= 0)
= -3V)
Parameter
E
BE
= 0)
= -3V)
1 %
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
I
I
T
I
I
I
f = 100 MHz
I
I
I
f = 300MHz
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
E
C
amb
CB
CB
CE
CE
EB
= 10 A
= 0
= 10 A
= 10 mA
= 150 mA
= 500 mA
= 150 mA
= 500 mA
= 0.1 mA
= 1 mA
= 10 mA
= 150 mA
= 500 mA
= 150 mA
= 10 mA
= 1 mA
= 10 mA
= 20 mA
= 0
= 20 mA
= 3 V
= 60 V
= 60 V
= 60 V
= 60 V
case
= -55
= 25
V
V
Test Conditions
o
CB
EB
C
V
V
= 0.5 V
= 10 V
V
V
o
T
CE
CE
C unless otherwise specified)
I
I
I
I
V
V
V
V
V
V
j
V
CE
CE
B
B
B
B
= 150
CE
CE
CE
CE
CE
CE
CE
= 15 mA
= 50 mA
= 15 mA
= 50 mA
= 10 V
= 10 V
= 20 V
= 20 V
= 10 V
= 10 V
= 10 V
= 10 V
= 1 V
= 10 V
= 10 V
Max
Max
o
C
f = 100KHz
f = 100 KHz
f = 1KHz
f = 1KHz
TO-39
187.5
50
Min.
100
0.6
40
75
35
50
75
40
50
35
50
75
6
Typ.
300
TO-18
83.3
300
Max.
300
300
375
0.3
1.2
10
10
10
20
10
25
60
1
2
8
o
o
Unit
MHz
C/W
C/W
nA
nA
nA
nA
pF
pF
V
V
V
V
V
V
V
A