BDW83C STMicroelectronics, BDW83C Datasheet
BDW83C
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BDW83C Summary of contents
Page 1
... Fast switching speed ■ High DC current gain Applications ■ Linear and switching industrial equipment Description The BDW83C is an epitaxial-base NPN power monolithic Darlington transistor mounted in TO-247 plastic package intended for use in power linear and switching applications. Table 1. Device summary Order code ...
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... Total dissipation at T TOT T Storage temperature stg T Max. operating junction temperature J Table 3. Thermal data Symbol R Thermal resistance junction-case thj-case 2/8 Parameter = < 5ms) p ≤ 25 °C c Parameter __max BDW83C Value Unit 100 V 100 0.5 A 130 W -65 to 150 °C 150 °C Value Unit 0.96 °C/W ...
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... BDW83C 2 Electrical characteristics (T = 25°C; unless otherwise specified) case Table 4. Electrical characteristics Symbol Collector cut-off current I CBO ( Collector cut-off current I CEO ( Emitter cut-off current I EBO ( Collector-emitter (1) sustaining voltage V CEO(sus Collector-emitter (1) V CE(sat) saturation voltage (1) Base-emitter on voltage V BE(on) (1) DC current gain h FE ...
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... BDW83C 3 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...
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... Package mechanical data Dim øP øR S 6/8 TO-247 Mechanical data mm. Min. Typ 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 BDW83C Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 14.80 4.30 3.65 5.50 ...