2STC5200 STMicroelectronics, 2STC5200 Datasheet - Page 3

• Manufacturer Part Number: 2STC5200
• Description: TRANS NPN HP BIPO 230V TO-264
• Manufacturer: STMicroelectronics

Specifications of 2STC5200

• Transistor Type: NPN
• Current - Collector (ic) (max): 15A
• Voltage - Collector Emitter Breakdown (max): 230V
• Vce Saturation (max) @ Ib, Ic: 3V @ 800mA, 8A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 1A, 5V
• Power - Max: 150W
• Frequency - Transition: 30MHz
• Mounting Type: Through Hole
• Package / Case: TO-264
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 230V
• Power Dissipation Pd: 150W
• Dc Collector Current: 8A
• Dc Current Gain Hfe: 80
• Transistor Case Style: TO-264
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 2STC5200; 497-7058-5

2STC5200
2
Electrical characteristics
(T
Table 4.
1. Pulsed: pulse duration = 300 µs, duty cycle < 1.5%
V
V
V
V
(BR)CEO
case
Symbol
(BR)EBO
CE(sat)
(BR)CBO
C
I
I
V
CBO
h
EBO
t
CBO
f
t
on
FE
t
BE
T
s
f
= 25°C unless otherwise specified)
(1)
(1)
(1)
Electrical characteristics
Collector cut-off current
(I
Emitter cut-off current
(I
Collector-emitter breakdown
voltage (I
Collector-base breakdown
voltage (I
Emitter-base breakdown
voltage (I
Collector-emitter saturation
voltage
Base-emitter voltage
DC current gain
Resistive load
Turn-on time
Storage time
Fall time
Transition frequency
Collector-base capacitance
(I
E
C
E
= 0)
= 0)
= 0)
Parameter
B
E
C
= 0)
= 0)
= 0)
V
V
I
I
I
I
I
I
I
V
I
I
V
C
C
E
C
C
C
C
B1
C
CB
EB
CC
CB
= 1 mA
= 50 mA
= 100 µA
= 8 A
= 7 A
= 1 A
= 7 A
= 1 A
= -I
= 5 V
= 10 V f = 1 MHz
= 230 V
= 60 V I
Test conditions
B2
= 0.5 A
I
V
V
V
V
B
CE
CE
CE
CE
C
= 800 mA
= 5A
= 5 V
= 5 V
= 5 V
= 5 V
Electrical characteristics
Min.
230
230
80
35
5
Typ.
0.24
150
4.7
0.6
30
Max.
160
1.5
5
5
3
MHz
Unit
µA
µA
pF
µs
µs
µs
V
V
V
V
V
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