BUV20 STMicroelectronics, BUV20 Datasheet - Page 2

• Manufacturer Part Number: BUV20
• Description: TRANSISTOR NPN HI CURR TO-3
• Manufacturer: STMicroelectronics

Specifications of BUV20

• Transistor Type: NPN
• Current - Collector (ic) (max): 50A
• Voltage - Collector Emitter Breakdown (max): 125V
• Vce Saturation (max) @ Ib, Ic: 1.2V @ 5A, 50A
• Current - Collector Cutoff (max): 3mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 25A, 2V
• Power - Max: 250W
• Frequency - Transition: 8MHz
• Mounting Type: Chassis Mount
• Package / Case: TO-204, TO-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7214-5; BUV20

BUV20
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
2/4
V
V
Pulsed: Pulse duration = 300 s, duty cycle
V
V
Symbol
R
CEO(sus)
(BR)EB0
CE(sat)
BE(sat)
thj-case
h
I
I
I
CEO
CEX
EBO
t
FE
f
t
on
t
T
s
f
Thermal Resistance Junction-case
Collector Cut-off
Current (V
Collector Cut-off
Current (I
Emitter Cut-off Current
(I
Collector-Emitter
Sustaining Voltage
(I
Emitter-base
Breakdown Voltage
(I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
Transition frequency
RESISTIVE LOAD
Turn-on Time
Fall Time
Storage Time
C
B
C
= 0)
= 0)
= 0)
Parameter
B
BE
= 0)
= -1.5V)
2 %
V
V
V
V
I
I
I
I
I
V
V
V
I
C
E
C
C
C
C
CE
CE
CE
EB
CE
CE
CE
= 50 mA
= 200 mA
= 25 A
= 50 A
= 50 A
= 50 A
= 5 V
= 160 V
= 160 V
= 100 V
= 2 V
= 4 V
= 15 V
case
= 25
Test Conditions
I
I
I
I
I
B
B
B
I
I
B1
o
C
C
C
C unless otherwise specified)
= 2.5 A
= 5 A
= 5 A
= 2 A f = 100 MHz
= 25 A
= 50 A
= -I
T
L = 25 mH
B2
case
= 5 A
= 125
o
C
Max
Min.
125
20
10
7
8
Typ.
0.3
0.7
1.4
0.7
Max.
0.6
1.2
1.5
0.3
1.2
12
60
3
3
1
2
o
Unit
MHz
mA
mA
mA
mA
C/W
V
V
V
V
V
s
s
s