PMST2369,115 NXP Semiconductors, PMST2369,115 Datasheet - Page 3

• Manufacturer Part Number: PMST2369,115
• Description: TRANS NPN 15V 200MA SOT323
• Manufacturer: NXP Semiconductors

Specifications of PMST2369,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 10mA, 1V
• Power - Max: 200mW
• Frequency - Transition: 500MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 40
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 200 mA
• Maximum Dc Collector Current: 300 mA
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 500 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934030840115; PMST2369 T/R; PMST2369 T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Note
1. Pulse test: t
1999 Apr 22
R
I
I
h
V
V
C
f
Switching times (between 10% and 90% levels); (see Fig.2)
t
t
t
t
t
t
amb
CBO
EBO
T
on
d
r
off
s
f
SYMBOL
SYMBOL
FE
CEsat
BEsat
NPN switching transistor
th j-a
c
= 25 °C unless otherwise specified.
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage I
base-emitter saturation voltage
collector capacitance
transition frequency
turn-on time
delay time
rise time
turn-off time
storage time
fall time
p
≤ 300 µs; δ ≤ 0.02.
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
I
I
I
E
E
C
C
C
C
C
C
E
C
Con
Boff
= 0; V
= 0; V
= i
= 0; V
= 10 mA; V
= 10 mA; V
= 100 mA; V
= 10 mA; I
= 10 mA; I
= 10 mA; V
= −1.5 mA
= 10 mA; I
e
= 0; V
3
CB
CB
EB
= 20 V
= 20 V; T
= 4 V
CONDITIONS
CB
B
B
CE
CE
CE
= 1 mA
= 1 mA
Bon
CE
= 5 V; f = 1 MHz
note 1
= 1 V
= 1 V; T
= 10 V; f = 100 MHz 500
= 2 V; note 1
= 3 mA;
CONDITIONS
j
= 125 °C
amb
= −55 °C 20
−
−
−
40
20
−
700
−
−
−
−
−
−
−
VALUE
MIN.
625
PMST2369
400
30
100
120
−
−
250
850
4
−
10
4
6
20
10
10
Product data sheet
MAX.
UNIT
K/W
nA
µA
nA
mV
mV
pF
MHz
ns
ns
ns
ns
ns
ns
UNIT