BF720,115 NXP Semiconductors, BF720,115 Datasheet - Page 3

• Manufacturer Part Number: BF720,115
• Description: TRANS NPN 300V 50MA SOT223
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BF720,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 30mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 25mA, 20V
• Power - Max: 1.2W
• Frequency - Transition: 60MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50 at 25 mA at 20 V
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 300 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 1200 mW
• Maximum Operating Frequency: 60 MHz
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933917360115; BF720 T/R; BF720 T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
CHARACTERISTICS
T
1999 Apr 21
R
R
I
I
h
V
C
f
j
CBO
EBO
T
SYMBOL
SYMBOL
FE
= 25 °C unless otherwise specified.
CEsat
NPN high-voltage transistors
th j-a
th j-s
re
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage I
feedback capacitance
transition frequency
PARAMETER
PARAMETER
I
I
I
I
I
I
E
E
C
C
C
C
C
= 0; V
= 0; V
= 0; V
= 25 mA; V
= 30 mA; I
= i
= 10 mA; V
c
= 0; V
3
CB
CB
EB
= 200 V
= 200 V; T
= 5 V
CONDITIONS
CE
B
CE
CE
= 5 mA
= 30 V; f = 1 MHz
note 1
note 1
= 20 V
= 10 V; f = 100 MHz
CONDITIONS
j
= 150 °C
−
−
−
50
−
−
60
MIN.
VALUE
BF720; BF722
106
25
Product data sheet
10
10
50
−
0.6
1.6
−
MAX.
2
.
UNIT
K/W
K/W
nA
µA
nA
V
pF
MHz
UNIT