BGA2011 T/R NXP Semiconductors, BGA2011 T/R Datasheet - Page 7
BGA2011 T/R
Manufacturer Part Number
BGA2011 T/R
Description
RF Amplifier TAPE-7 MMIC-RFS
Manufacturer
NXP Semiconductors
Type
Low Noise Wideband Amplifierr
Datasheet
1.BGA2011115.pdf
(12 pages)
Specifications of BGA2011 T/R
Operating Frequency
0.9 GHz
Noise Figure
1.5 dB
Operating Supply Voltage
3 V
Supply Current
15 mA
Maximum Power Dissipation
135 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-363
Number Of Channels
1 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BGA2011,115
NXP Semiconductors
2000 Dec 04
handbook, full pagewidth
handbook, full pagewidth
900 MHz high linear low noise amplifier
I
I
C
C
= 15 mA; V
= 15 mA; V
S
S
= V
= V
C
C
= 3 V; P
= 3 V; P
Fig.9 Common emitter forward transmission coefficient (s
Fig.8 Common emitter input reflection coefficient (s
D
D
= 30 dBm; Z
= 30 dBm; Z
180°
180°
100 MHz
20
0
−135°
o
−135°
o
−0.2
+0.2
135°
135°
16
= 50
= 50
0.2
12
+0.5
−0.5
3 GHz
8
900 MHz
0.5
500 MHz
4
−90°
−90°
90°
+1
−1
90°
7
1
900 MHz
1.8 GHz
3 GHz
2
100 MHz
+2
−2
5
11
−45°
−45°
45°
); typical values.
45°
21
+5
−5
MLD486
); typical values.
MLD487
0°
0°
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BGA2011