BC846,215 NXP Semiconductors, BC846,215 Datasheet - Page 5

• Manufacturer Part Number: BC846,215
• Description: TRANSISTOR NPN 65V 100MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BC846,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 200mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 65V
• Transistor Type: NPN
• Frequency - Transition: 100MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 110 @ 2mA, 5V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 100mA
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 65 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 65V
• Collector-base Voltage: 80V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 110
• Frequency (max): 100MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933589540215::BC846 T/R::BC846 T/R

NXP Semiconductors
7. Characteristics
BC846_BC546_SER_7
Product data sheet
Table 8.
T
[1]
[2]
[3]
Symbol Parameter
I
I
h
V
V
V
f
C
C
NF
CBO
EBO
T
amb
FE
CEsat
BEsat
BE
c
e
Pulse test: t
V
V
= 25
BEsat
BE
decreases by approximately 2 mV/K with increasing temperature.
°
decreases by approximately 1.7 mV/K with increasing temperature.
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage I
transition frequency
collector capacitance V
emitter capacitance
noise figure
C unless otherwise specified.
Characteristics
h
h
h
h
FE
FE
FE
FE
p
≤ 300 μs; δ ≤ 0.02.
group A
group B
group A
group B
Rev. 07 — 17 November 2009
Conditions
V
V
T
V
V
V
V
V
V
I
I
I
I
I
V
f = 100 MHz
f = 1 MHz
V
f = 1 MHz
I
R
B = 200 Hz
C
C
C
C
C
C
C
j
CB
CB
EB
CE
CE
CE
CE
CE
CE
CB
EB
S
= 150 °C
= 10 mA; I
= 100 mA; I
= 10 mA; I
= 100 mA; I
= 2 mA; V
= 10 mA; V
= 200 μA; V
= 2 kΩ; f = 1 kHz;
= 5 V; I
= 0.5 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 10 V; I
65 V, 100 mA NPN general-purpose transistors
E
C
C
C
C
C
C
CE
B
B
E
E
E
= 0 A
C
= 10 μA
= 10 μA
= 2 mA
= 2 mA
= 2 mA
= 10 mA;
CE
B
B
CE
= 0 A
= 0 A;
= 0.5 mA
= 0.5 mA
= i
= i
= 5 V
= 5 mA
= 5 mA
= 5 V
e
BC846/BC546 series
= 5 V;
c
= 0 A;
= 0 A;
[1]
[2]
[2]
[3]
[3]
Min
-
-
-
-
-
110
110
200
-
-
-
-
580
-
100
-
-
-
Typ
-
-
-
180
290
-
180
290
90
200
760
900
660
-
-
2
11
2
© NXP B.V. 2009. All rights reserved.
Max
15
5
100
-
-
450
220
450
200
400
-
-
700
770
-
3
-
10
Unit
nA
μA
nA
mV
mV
mV
mV
mV
mV
MHz
pF
pF
dB
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