PMBT2369,235 NXP Semiconductors, PMBT2369,235 Datasheet - Page 3

• Manufacturer Part Number: PMBT2369,235
• Description: TRANS NPN 15V 200MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBT2369,235

• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 10mA, 1V
• Power - Max: 250mW
• Frequency - Transition: 500MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 933828890235; PMBT2369 /T3; PMBT2369 /T3

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
2004 Jan 22
R
I
I
h
V
V
C
f
Switching times (between 10% and 90% levels); (see Fig.2)
t
t
t
t
t
t
j
CBO
EBO
T
on
d
r
off
s
f
SYMBOL
SYMBOL
FE
= 25 °C unless otherwise specified.
CEsat
BEsat
NPN switching transistor
th(j-a)
c
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
transition frequency
turn-on time
delay time
rise time
turn-off time
storage time
fall time
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
I
I
I
I
E
E
C
C
C
C
C
C
E
C
Con
Boff
= 0; V
= 0; V
= I
= 0; V
= 10 mA; V
= 10 mA; V
= 100 mA; V
= 10 mA; I
= 10 mA; I
= 10 mA; V
= −1.5 mA
= 10 mA; I
e
= 0; V
3
CB
CB
EB
= 20 V
= 20 V; T
= 4 V
CONDITIONS
CB
B
B
CE
CE
CE
= 1 mA
= 1 mA
Bon
CE
note 1
= 5 V; f = 1 MHz
= 1 V
= 1 V; T
= 10 V; f = 100 MHz
= 2 V
= 3 mA;
CONDITIONS
j
= 125 °C
amb
= −55 °C
−
−
−
40
20
20
−
700
−
500
−
−
−
−
−
−
MIN.
VALUE
500
PMBT2369
Product data sheet
400
30
100
120
−
−
250
850
4
−
10
4
6
20
10
10
MAX.
UNIT
K/W
nA
µA
nA
mV
mV
pF
MHz
ns
ns
ns
ns
ns
ns
UNIT